RC28F128J3D75D TR

Product Overview

Category

The RC28F128J3D75D TR belongs to the category of non-volatile memory devices.

Use

This product is primarily used for data storage in various electronic devices, such as computers, smartphones, and embedded systems.

Characteristics

• Non-volatile: The RC28F128J3D75D TR retains stored data even when power is removed.
• High capacity: It offers a storage capacity of 128 gigabits (16 gigabytes).
• Fast access time: The device provides quick access to stored data, reducing latency.
• Reliable: It has a high endurance and can withstand numerous read and write cycles.
• Low power consumption: The RC28F128J3D75D TR operates efficiently, minimizing energy usage.

Package and Quantity

This product is available in a compact package, typically a surface-mount technology (SMT) package. The exact package type may vary depending on the manufacturer. It is commonly sold in quantities of one or more units per package.

Specifications

• Storage Capacity: 128 gigabits (16 gigabytes)
• Interface: Serial Peripheral Interface (SPI)
• Supply Voltage: 2.7V - 3.6V
• Operating Temperature Range: -40°C to +85°C
• Data Retention: Up to 20 years
• Endurance: Up to 100,000 program/erase cycles

Pin Configuration

The detailed pin configuration of the RC28F128J3D75D TR is as follows:

| Pin Number | Pin Name | Description | |------------|----------|-------------| | 1 | VCC | Power supply voltage | | 2 | GND | Ground | | 3 | HOLD | Suspends ongoing operations | | 4 | WP | Write protect | | 5 | SCK | Serial clock input | | 6 | SI | Serial data input | | 7 | SO | Serial data output | | 8 | CS | Chip select |

Functional Features

The RC28F128J3D75D TR offers the following functional features:

• High-speed data transfer: It supports fast serial communication, enabling efficient data transfer between the memory device and the host system.
• Flexible write protection: The WP pin allows for write protection, preventing accidental modification of stored data.
• Sector erase capability: The device supports sector-based erasure, allowing selective deletion of specific memory regions.
• Error correction: Built-in error correction mechanisms ensure data integrity during read and write operations.
• Software and hardware reset: The HOLD pin enables suspension of ongoing operations, while a power cycle or command can perform a full reset.

Advantages and Disadvantages

Advantages

• Large storage capacity
• Fast access time
• Low power consumption
• High endurance
• Reliable data retention

Disadvantages

• Relatively higher cost compared to other memory technologies
• Limited write endurance compared to some newer memory technologies

Working Principles

The RC28F128J3D75D TR utilizes flash memory technology to store data. It consists of numerous memory cells that can be electrically programmed and erased. These cells are organized into sectors, allowing for efficient read and write operations. The device uses a serial interface (SPI) to communicate with the host system, enabling seamless integration into various electronic devices.

Detailed Application Field Plans

The RC28F128J3D75D TR finds applications in a wide range of electronic devices, including but not limited to: - Solid-state drives (SSDs) - Smartphones and tablets - Digital cameras - Automotive electronics - Industrial control systems - Internet of Things (IoT) devices

Detailed and Complete Alternative Models

Some alternative models to the RC28F128J3D75D TR include: - RC28F128J3D75: Similar specifications, but without the "TR" suffix denoting a specific package type. - RC28F128J3D75B: Variant with different package options. - RC28F128J3D75E: Enhanced version with additional features.

These alternative models offer similar functionality and can be considered as substitutes based on specific requirements and availability.

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