TE28F256P33T95A

Basic Information Overview

• Category: Flash Memory
• Use: Data storage and retrieval in electronic devices
• Characteristics:
  • Non-volatile memory
  • High-density storage
  • Fast read and write operations
• Package: TSSOP
• Essence: Provides reliable and efficient data storage solution for various electronic devices
• Packaging/Quantity: Available in reels, with a quantity of 2500 units per reel

Specifications

• Memory Type: NOR Flash
• Memory Size: 256 Megabits (32 Megabytes)
• Organization: 32M x 8 bits
• Supply Voltage: 2.7V to 3.6V
• Operating Temperature Range: -40°C to +85°C
• Access Time: 95 ns
• Erase/Program Suspend and Resume Support: Yes
• Burst Mode Support: Yes
• Write Protection: Hardware and Software options available
• Data Retention: Up to 20 years

Detailed Pin Configuration

The TE28F256P33T95A has a total of 48 pins. The pin configuration is as follows:

1. VPP - Programming Voltage
2. A0-A21 - Address Inputs
3. DQ0-DQ7 - Data Inputs/Outputs
4. WE# - Write Enable
5. CE# - Chip Enable
6. OE# - Output Enable
7. RP# - Ready/Busy Status
8. RESET# - Reset Input
9. WP# - Write Protect
10. RY/BY# - Read/Busy Output
11. BYTE# - Byte Enable
12. VCC - Power Supply
13. GND - Ground

Functional Features

• High-speed read and write operations
• Low power consumption
• Sector erase and byte programming capabilities
• Built-in error correction and detection mechanisms
• Suspend and resume support for erase and program operations
• Burst mode support for faster data transfer
• Hardware and software write protection options

Advantages

• High-density storage capacity
• Fast access times
• Reliable and durable
• Low power consumption
• Wide operating temperature range
• Support for various read and write modes
• Error correction and detection mechanisms enhance data integrity

Disadvantages

• Limited endurance (number of erase/write cycles)
• Relatively higher cost compared to other memory technologies
• Requires external programming voltage for certain operations

Working Principles

The TE28F256P33T95A is based on NOR flash memory technology. It utilizes a grid of floating-gate transistors to store data. The memory cells are organized in a matrix, with each cell capable of storing one bit of information. Data can be written to the memory by applying appropriate voltages to the control pins, and it can be read by activating the necessary control signals. The memory operates by using electrical charges trapped in the floating gates to represent binary values.

Detailed Application Field Plans

The TE28F256P33T95A is widely used in various electronic devices that require non-volatile data storage. Some common application fields include: - Embedded systems - Automotive electronics - Industrial control systems - Consumer electronics - Communication devices

Detailed and Complete Alternative Models

1. TE28F256P30T85A - Similar specifications, but with a lower access time of 85 ns.
2. TE28F512P33T95A - Double the memory size (512 Megabits) with similar characteristics and package.
3. TE28F128P30T85A - Half the memory size (128 Megabits) with similar specifications and features.

These alternative models provide options with varying memory sizes and access times to suit different application requirements.

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