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JAN2N3998

JAN2N3998

Product Overview

Category

The JAN2N3998 belongs to the category of semiconductor devices, specifically a high-power NPN transistor.

Use

This transistor is commonly used in high-power amplification and switching applications due to its ability to handle large currents and voltages.

Characteristics

  • High power handling capability
  • NPN bipolar junction transistor
  • Suitable for high-frequency applications
  • Robust construction for reliability

Package

The JAN2N3998 is typically available in a TO-3 metal can package, providing excellent thermal dissipation and mechanical ruggedness.

Essence

The essence of JAN2N3998 lies in its ability to amplify and switch high-power signals with efficiency and reliability.

Packaging/Quantity

It is usually supplied in individual packaging and quantities as per the customer's requirements.

Specifications

  • Maximum Collector-Emitter Voltage: 150V
  • Maximum Collector Current: 30A
  • Power Dissipation: 200W
  • Transition Frequency: 4MHz
  • Operating Temperature Range: -65°C to 200°C

Detailed Pin Configuration

The JAN2N3998 transistor has three pins: 1. Base (B) 2. Emitter (E) 3. Collector (C)

Functional Features

  • High current and voltage handling capacity
  • Low saturation voltage
  • Fast switching speed
  • Wide operating temperature range

Advantages

  • Robust construction for reliability
  • Suitable for high-power applications
  • Excellent thermal dissipation
  • Wide operating temperature range

Disadvantages

  • Relatively larger physical size
  • Higher cost compared to low-power transistors
  • Requires careful heat management in high-power applications

Working Principles

The JAN2N3998 operates based on the principles of bipolar junction transistors, utilizing the flow of charge carriers to amplify or switch electronic signals.

Detailed Application Field Plans

The JAN2N3998 finds extensive use in the following applications: - High-power audio amplifiers - Switching power supplies - RF power amplifiers - Motor control circuits - High-frequency oscillators

Detailed and Complete Alternative Models

Some alternative models to JAN2N3998 include: - 2N3055 - MJ15003 - TIP35C - MJE2955

In conclusion, the JAN2N3998 NPN transistor offers high-power handling capabilities, making it suitable for various applications requiring robust performance. Its advantages include reliable operation, high power dissipation, and wide temperature tolerance, while its disadvantages include larger size and higher cost. Understanding its specifications, pin configuration, functional features, and alternative models provides a comprehensive insight into its utility and versatility in electronic circuits.

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  1. What is JAN2N3998?

    • JAN2N3998 is a high-reliability, military-grade silicon NPN transistor designed for use in demanding applications.
  2. What are the key specifications of JAN2N3998?

    • The JAN2N3998 features a maximum collector current of 600 mA, a maximum power dissipation of 625 mW, and a voltage rating of 60V.
  3. In what types of technical solutions can JAN2N3998 be used?

    • JAN2N3998 can be used in a wide range of technical solutions including amplifiers, oscillators, switching circuits, and other general-purpose applications.
  4. What are the advantages of using JAN2N3998 in technical solutions?

    • JAN2N3998 offers high reliability, extended temperature range, and excellent performance under harsh environmental conditions, making it suitable for critical applications.
  5. What are the typical operating conditions for JAN2N3998?

    • The typical operating conditions for JAN2N3998 include a collector current of 100 mA, a collector-emitter voltage of 20V, and an ambient temperature range of -65°C to +200°C.
  6. Are there any specific precautions to consider when using JAN2N3998 in technical solutions?

    • It is important to ensure proper heat dissipation and adhere to the specified operating conditions to maximize the performance and reliability of JAN2N3998.
  7. Can JAN2N3998 be used in radiation-prone environments?

    • Yes, JAN2N3998 is designed to withstand radiation exposure and is suitable for use in aerospace, defense, and other high-radiation environments.
  8. What are the common failure modes associated with JAN2N3998?

    • Common failure modes include thermal overstress, voltage breakdown, and excessive current stress, which can be mitigated through proper design and application considerations.
  9. Is JAN2N3998 a suitable replacement for commercial-grade transistors?

    • While JAN2N3998 offers enhanced reliability and ruggedness, it may not be necessary for all commercial applications and should be considered based on specific requirements.
  10. Where can I find detailed technical documentation for JAN2N3998?

    • Detailed technical documentation for JAN2N3998, including datasheets and application notes, can be obtained from authorized distributors or the manufacturer's website.