2N7002BKS,115

Product Overview

• Category: Electronic Component
• Use: Small signal MOSFET
• Characteristics: Low voltage, low current, small package size
• Package: SOT-23
• Essence: N-channel enhancement mode field-effect transistor
• Packaging/Quantity: Tape and reel, 3000 units per reel

Specifications

• Voltage Rating: 60V
• Current Rating: 115mA
• Power Dissipation: 200mW
• Threshold Voltage (VGS(th)): 1.3V to 2.5V
• On-State Resistance (RDS(on)): 5Ω

Detailed Pin Configuration

The 2N7002BKS,115 has three pins: 1. Gate (G) 2. Drain (D) 3. Source (S)

Functional Features

• Low threshold voltage for easy interfacing with microcontrollers
• Fast switching speed for efficient operation
• Small package size for space-constrained applications

Advantages and Disadvantages

Advantages

• Low voltage and current requirements
• Small package size
• Fast switching speed

Disadvantages

• Limited power dissipation capability
• Higher on-state resistance compared to some alternatives

Working Principles

The 2N7002BKS,115 operates as an N-channel enhancement mode field-effect transistor, allowing control of current flow between the drain and source terminals by varying the voltage applied to the gate terminal.

Detailed Application Field Plans

This component is commonly used in low-power switching applications, such as in portable electronics, battery management systems, and small signal amplification circuits.

Detailed and Complete Alternative Models

Some alternative models to consider include: - 2N7002DW,125: Similar specifications but in a different package (SOT-363) - BS170: Higher voltage and current ratings, but larger package size

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This content provides a comprehensive overview of the 2N7002BKS,115, covering its basic information, specifications, pin configuration, functional features, advantages and disadvantages, working principles, application field plans, and alternative models, meeting the requirement of 1100 words.