BUK9Y72-80E,115

Product Overview

Category: Power MOSFET
Use: Switching applications
Characteristics: High voltage, low on-resistance
Package: TO-220AB
Essence: Power transistor for high voltage applications
Packaging/Quantity: Tape and reel, 800 units

Specifications

• Voltage - Rated: 80V
• On-Resistance (Max): 9.5 mOhm
• Current - Continuous Drain (Id) @ 25°C: 120A
• Rds On (Max) @ Id, Vgs: 11 mOhm @ 60A, 10V
• Input Capacitance (Ciss) @ Vds: 5200pF @ 25V
• Power Dissipation (Max): 200W

Detailed Pin Configuration

1. Gate
2. Drain
3. Source

Functional Features

• Low on-resistance
• High current capability
• Fast switching speed
• Low gate charge

Advantages and Disadvantages

Advantages: - Suitable for high voltage applications - Low power dissipation - Fast switching speed

Disadvantages: - Relatively high input capacitance - Larger package size compared to SMD alternatives

Working Principles

The BUK9Y72-80E,115 is a power MOSFET that operates based on the principle of field-effect transistors. When a voltage is applied to the gate terminal, it creates an electric field which controls the flow of current between the drain and source terminals.

Detailed Application Field Plans

This power MOSFET is commonly used in various switching applications such as power supplies, motor control, and lighting systems. Its high voltage rating and low on-resistance make it suitable for applications requiring efficient power management and high current handling capabilities.

Detailed and Complete Alternative Models

• IRF1405PbF
• FDP8878
• STP55NF06L

Note: The above alternative models are provided for reference and may have different specifications and characteristics.

---

This entry provides a comprehensive overview of the BUK9Y72-80E,115 power MOSFET, including its specifications, pin configuration, functional features, advantages and disadvantages, working principles, application field plans, and alternative models.