PUMH17,115
Product Overview
PUMH17,115 is a high-performance NPN bipolar junction transistor (BJT) designed for general-purpose amplifier and switching applications. This transistor belongs to the category of discrete semiconductors and is commonly used in various electronic circuits due to its versatile characteristics.
- Category: Discrete Semiconductors
- Use: Amplification and Switching
- Characteristics: High gain, low noise, and fast switching speed
- Package: SOT363 (SC-88)
- Essence: NPN BJT
- Packaging/Quantity: Tape and Reel, 3000 units per reel
Specifications
- Collector-Base Voltage (VCBO): 40V
- Collector-Emitter Voltage (VCEO): 40V
- Emitter-Base Voltage (VEBO): 5V
- Collector Current (IC): 100mA
- Total Power Dissipation (PTOT): 225mW
- Transition Frequency (fT): 250MHz
Detailed Pin Configuration
The PUMH17,115 transistor has three pins: 1. Collector (C) 2. Base (B) 3. Emitter (E)
Functional Features
- High current gain
- Low saturation voltage
- Fast switching speed
- Low noise
Advantages and Disadvantages
Advantages: - Versatile application range - Compact package size - Suitable for high-frequency applications
Disadvantages: - Limited maximum collector current - Relatively low power dissipation capability
Working Principles
PUMH17,115 operates based on the principles of amplification and control of current flow. When biased correctly, it allows for precise control of current between the collector and emitter terminals, enabling signal amplification and switching functions.
Detailed Application Field Plans
PUMH17,115 finds extensive use in the following applications: - Audio amplifiers - Signal processing circuits - RF amplifiers - Oscillator circuits - Switching circuits
Detailed and Complete Alternative Models
- BC847B,215
- BC846B,215
- BC847C,215
- BC846C,215
In conclusion, PUMH17,115 is a versatile NPN BJT with excellent amplification and switching capabilities, making it suitable for a wide range of electronic applications.
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What is PUMH17,115?
- PUMH17,115 is a high-performance NPN bipolar junction transistor (BJT) commonly used in various technical solutions.
What are the key specifications of PUMH17,115?
- The PUMH17,115 transistor typically has a maximum collector current of 100mA, a maximum collector-base voltage of 40V, and a maximum power dissipation of 225mW.
In what types of technical solutions is PUMH17,115 commonly used?
- PUMH17,115 is often utilized in applications such as amplifiers, switching circuits, and general-purpose electronic designs.
What are the recommended operating conditions for PUMH17,115?
- It is advisable to operate PUMH17,115 within a temperature range of -55°C to 150°C and to ensure proper biasing and heat dissipation.
How does PUMH17,115 compare to similar transistors in terms of performance?
- PUMH17,115 offers high current gain, low saturation voltage, and excellent high-frequency performance compared to many similar transistors.
Are there any specific layout considerations when using PUMH17,115 in a circuit?
- Proper PCB layout techniques should be employed to minimize parasitic effects and ensure stable operation of the transistor.
Can PUMH17,115 be used in low-power applications?
- Yes, PUMH17,115 is suitable for low-power applications due to its low collector current and power dissipation characteristics.
What are the typical package options available for PUMH17,115?
- PUMH17,115 is commonly available in small surface-mount packages such as SOT-363 or SOT-23.
Are there any known reliability issues with PUMH17,115?
- PUMH17,115 is generally known for its reliability, but it is important to adhere to recommended operating conditions and handling guidelines.
Where can I find detailed application notes and reference designs for PUMH17,115?
- Detailed application notes and reference designs for PUMH17,115 can often be found in the manufacturer's datasheets, application guides, and online technical resources.