BFS17,235

Product Overview

Category

BFS17,235 belongs to the category of integrated circuits.

Use

It is commonly used in electronic devices for signal processing and amplification.

Characteristics

BFS17,235 is known for its high-frequency performance, low noise, and low power consumption.

Package

The product comes in a small outline transistor (SOT) package.

Essence

BFS17,235 is essential for applications requiring high-frequency signal amplification.

Packaging/Quantity

It is typically packaged in reels containing a specific quantity based on customer requirements.

Specifications

• Type: NPN Bipolar Junction Transistor (BJT)
• Maximum Power Dissipation: 350mW
• Collector-Base Voltage (Vcbo): 30V
• Collector-Emitter Voltage (Vceo): 20V
• Emitter-Base Voltage (Vebo): 5V
• Collector Current (Ic): 100mA
• DC Current Gain (hfe): 100 - 400
• Transition Frequency (ft): 6GHz

Detailed Pin Configuration

1. Emitter (E)
2. Base (B)
3. Collector (C)

Functional Features

• High-frequency signal amplification
• Low noise performance
• Suitable for low power applications

Advantages

• Wide operating frequency range
• Compact SOT package for space-constrained designs
• Low power consumption

Disadvantages

• Limited maximum power dissipation
• Sensitivity to voltage fluctuations

Working Principles

BFS17,235 operates based on the principles of bipolar junction transistors, where the input signal controls the current flow between the collector and emitter terminals, resulting in signal amplification.

Detailed Application Field Plans

BFS17,235 is widely used in: - Radio frequency (RF) amplifiers - Oscillator circuits - High-frequency communication systems

Detailed and Complete Alternative Models

• BFU520X: Similar high-frequency BJT with enhanced power handling
• BFR93A: High-frequency BJT with lower noise figure

In conclusion, BFS17,235 is a crucial component in electronic devices requiring high-frequency signal amplification, offering a balance of performance and power efficiency.

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