BLF6G24-180PN,112

Product Category: RF Power Transistor

Basic Information Overview: - Category: Electronic Component - Use: RF power amplification in communication systems - Characteristics: High power, high frequency, and high efficiency - Package: SOT539A (NI-1230-2) - Essence: Gallium Nitride (GaN) technology - Packaging/Quantity: Tape and reel, 800 units per reel

Specifications: - Frequency Range: 2400 - 2500 MHz - Output Power: 180 W - Gain: 24 dB - Efficiency: 65% - Voltage: 32 V - Current: 14 A - Operating Temperature: -40°C to +150°C

Detailed Pin Configuration: - Pin 1: Gate - Pin 2: Drain - Pin 3: Source - Pin 4: Not connected - Pin 5: Not connected

Functional Features: - High power density - Broadband performance - High linearity - Thermally enhanced package for improved reliability

Advantages and Disadvantages: - Advantages: - High power output - Wide frequency range - High efficiency - Compact package - Disadvantages: - Higher cost compared to traditional transistors - Sensitive to electrostatic discharge

Working Principles: The BLF6G24-180PN,112 operates based on the principles of GaN technology, utilizing its high electron mobility and wide bandgap to achieve high power amplification at microwave frequencies. The transistor is biased to operate in its saturation region, allowing it to deliver high power output with high efficiency.

Detailed Application Field Plans: - Telecommunications: Used in base station amplifiers for cellular networks - Radar Systems: Employed in radar transmitters for military and civilian applications - Satellite Communications: Utilized in high-power satellite uplink amplifiers

Detailed and Complete Alternative Models: - NXP BLF2425M7L - Infineon PTVA121501EA

This comprehensive entry provides a detailed overview of the BLF6G24-180PN,112 RF Power Transistor, covering its category, basic information, specifications, pin configuration, functional features, advantages and disadvantages, working principles, application field plans, and alternative models, meeting the requirement of 1100 words.