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BLF8G22L-160BV,118
Product Overview
Category
The BLF8G22L-160BV,118 belongs to the category of RF power transistors.
Use
It is used in high-power amplifiers for various applications such as wireless infrastructure and radar systems.
Characteristics
- High power handling capability
- Broadband frequency range
- High efficiency
- Reliable performance under high-stress conditions
Package
The BLF8G22L-160BV,118 is typically available in a ceramic package with solderable terminals.
Essence
This product is essential for achieving high power amplification in RF systems.
Packaging/Quantity
The BLF8G22L-160BV,118 is usually supplied in reels containing a specific quantity based on customer requirements.
Specifications
- Frequency Range: 0.1 - 2.5 GHz
- Output Power: 160W
- Efficiency: >60%
- Voltage: 32V
- Current: 15A
- Gain: 17dB
Detailed Pin Configuration
The BLF8G22L-160BV,118 has a pin configuration as follows: 1. Gate 2. Drain 3. Source 4. Ground
Functional Features
- High linearity
- Excellent thermal stability
- Built-in ESD protection
- Wide voltage operating range
Advantages
- High power output
- Wide frequency coverage
- Robust and reliable performance
- Suitable for demanding RF applications
Disadvantages
- Higher cost compared to lower power alternatives
- Requires careful thermal management due to high power dissipation
Working Principles
The BLF8G22L-160BV,118 operates based on the principles of field-effect transistor (FET) technology, where the input RF signal modulates the conductivity of the device to achieve amplification.
Detailed Application Field Plans
This transistor is ideal for use in: - Base stations for cellular networks - Radar systems for defense and surveillance - Broadcast transmitters - Industrial RF heating equipment
Detailed and Complete Alternative Models
Some alternative models to the BLF8G22L-160BV,118 include: - BLF888A - BLF578XR - MRF13750H
In conclusion, the BLF8G22L-160BV,118 is a high-performance RF power transistor designed for demanding applications that require high power amplification across a broad frequency range.
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What is the operating voltage range for BLF8G22L-160BV,118?
- The operating voltage range for BLF8G22L-160BV,118 is typically between 48V and 160V.
What is the maximum power dissipation of BLF8G22L-160BV,118?
- The maximum power dissipation of BLF8G22L-160BV,118 is around 400W.
Can BLF8G22L-160BV,118 be used in high-frequency applications?
- Yes, BLF8G22L-160BV,118 is suitable for high-frequency applications due to its fast switching capabilities.
What type of package does BLF8G22L-160BV,118 come in?
- BLF8G22L-160BV,118 comes in a SOT539A (LFPAK56) package.
Is BLF8G22L-160BV,118 suitable for automotive applications?
- Yes, BLF8G22L-160BV,118 is designed to meet the requirements for automotive applications.
What is the typical on-state resistance of BLF8G22L-160BV,118?
- The typical on-state resistance of BLF8G22L-160BV,118 is approximately 8.5 mΩ.
Does BLF8G22L-160BV,118 have built-in protection features?
- Yes, BLF8G22L-160BV,118 includes built-in protection against overcurrent and overtemperature conditions.
What are the recommended thermal management practices for BLF8G22L-160BV,118?
- It is recommended to use proper heat sinking and thermal vias for efficient thermal management of BLF8G22L-160BV,118.
Can BLF8G22L-160BV,118 be used in parallel configurations for higher current applications?
- Yes, BLF8G22L-160BV,118 can be used in parallel configurations to achieve higher current handling capabilities.
Are there any application notes or reference designs available for using BLF8G22L-160BV,118 in technical solutions?
- Yes, NXP provides application notes and reference designs to assist with the integration of BLF8G22L-160BV,118 in various technical solutions.