BUK1M200-50SGTD,11

Product Overview

Category

The BUK1M200-50SGTD,11 belongs to the category of power MOSFETs.

Use

This product is commonly used in various electronic devices and circuits that require efficient power management and switching capabilities.

Characteristics

• High voltage capability
• Low on-resistance
• Fast switching speed
• Enhanced thermal performance

Package

The BUK1M200-50SGTD,11 is available in a TO-252 (DPAK) package, which provides excellent thermal dissipation properties.

Essence

The essence of this product lies in its ability to efficiently control and manage power flow in electronic systems, ensuring optimal performance and reliability.

Packaging/Quantity

The BUK1M200-50SGTD,11 is typically packaged in reels or tubes, with each reel/tube containing a specific quantity of units. The exact packaging and quantity may vary depending on the supplier.

Specifications

• Voltage Rating: 200V
• Current Rating: 50A
• On-Resistance: 0.02Ω
• Gate Threshold Voltage: 2.5V
• Maximum Power Dissipation: 125W
• Operating Temperature Range: -55°C to +175°C

Detailed Pin Configuration

The BUK1M200-50SGTD,11 features a standard three-pin configuration:

1. Drain (D): This pin is connected to the load or the circuit where power is being delivered.
2. Source (S): This pin is connected to the ground or the reference potential of the system.
3. Gate (G): This pin controls the switching behavior of the MOSFET by applying appropriate voltage levels.

Functional Features

• Low conduction losses due to low on-resistance
• Fast switching speed enables efficient power management
• High voltage capability allows for use in a wide range of applications
• Enhanced thermal performance ensures reliable operation under demanding conditions

Advantages and Disadvantages

Advantages

• Efficient power management and switching capabilities
• Low on-resistance reduces conduction losses
• Fast switching speed improves overall system performance
• Suitable for high voltage applications

Disadvantages

• May require additional circuitry for proper gate drive
• Limited availability of alternative models with similar specifications

Working Principles

The BUK1M200-50SGTD,11 operates based on the principles of metal-oxide-semiconductor field-effect transistors (MOSFETs). When an appropriate voltage is applied to the gate pin, it creates an electric field that controls the flow of current between the drain and source pins. By modulating this electric field, the MOSFET can effectively switch between conducting and non-conducting states, allowing for efficient power management.

Detailed Application Field Plans

The BUK1M200-50SGTD,11 finds applications in various fields, including:

1. Power supplies and converters
2. Motor control systems
3. Lighting systems
4. Industrial automation
5. Renewable energy systems

Detailed and Complete Alternative Models

While the BUK1M200-50SGTD,11 offers specific characteristics and specifications, there are alternative models available from different manufacturers that may suit similar requirements. Some alternative models include:

• IRFB4110PbF by Infineon Technologies
• STP55NF06L by STMicroelectronics
• FDPF51N25 by Fairchild Semiconductor

These alternative models provide similar functionality and can be considered as substitutes depending on the specific application requirements.

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