MRF8P20140WGHSR3

Introduction

The MRF8P20140WGHSR3 is a high-power RF transistor designed for use in various applications. This entry provides an overview of the product, including its category, use, characteristics, package, essence, packaging/quantity, specifications, detailed pin configuration, functional features, advantages and disadvantages, working principles, detailed application field plans, and alternative models.

Basic Information Overview

• Category: High-Power RF Transistor
• Use: Amplification of radio frequency signals
• Characteristics: High power output, wide frequency range, high efficiency
• Package: SMD (Surface Mount Device)
• Essence: Power amplification in RF communication systems
• Packaging/Quantity: Tape and reel packaging, quantity varies by supplier

Specifications

• Frequency Range: 1805 - 2200 MHz
• Output Power: 14 W
• Gain: 15 dB
• Efficiency: 55%
• Voltage: 28 V
• Current: 1.5 A

Detailed Pin Configuration

The MRF8P20140WGHSR3 has a standard pin configuration with input, output, and bias connections. The pinout details are as follows: - Pin 1: Input - Pin 2: Ground - Pin 3: Bias - Pin 4: Output

Functional Features

• High power gain
• Wide frequency coverage
• High linearity
• Thermal stability

Advantages and Disadvantages

Advantages

• High power output
• Wide frequency range
• High efficiency
• Compact SMD package

Disadvantages

• Higher cost compared to lower power transistors
• Requires careful thermal management

Working Principles

The MRF8P20140WGHSR3 operates on the principle of power amplification using advanced semiconductor technology. When biased and driven with an input signal, it amplifies the signal while maintaining linearity and efficiency.

Detailed Application Field Plans

The MRF8P20140WGHSR3 is suitable for use in various RF communication systems, including: - Base stations - Radar systems - Wireless infrastructure - Satellite communication

Detailed and Complete Alternative Models

• MRF8P20140HR3: Lower power version for cost-sensitive applications
• MRF8P20140WHR5: Higher power version for extended frequency range

In conclusion, the MRF8P20140WGHSR3 is a high-power RF transistor with excellent performance characteristics suitable for a wide range of RF amplification applications.

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