MRF8P26080HSR5

Introduction

The MRF8P26080HSR5 is a high-power RF transistor designed for use in various applications. This entry provides an overview of the product, including its category, use, characteristics, packaging, specifications, pin configuration, functional features, advantages and disadvantages, working principles, application field plans, and alternative models.

Basic Information Overview

• Category: RF Transistor
• Use: Power amplification in RF applications
• Characteristics: High power, high frequency capability
• Package: SMD (Surface Mount Device)
• Essence: Amplifying RF signals with high efficiency
• Packaging/Quantity: Typically supplied in reels or tubes

Specifications

• Frequency Range: 2.5 - 2700 MHz
• Power Output: 280 Watts
• Voltage: 65 Volts
• Current: 20 Amps
• Gain: 17 dB
• Efficiency: 70%

Detailed Pin Configuration

The MRF8P26080HSR5 has a standard pin configuration with specific connections for input, output, biasing, and grounding. The detailed pinout can be found in the product datasheet.

Functional Features

• High power gain
• Broad frequency range
• High efficiency
• Excellent linearity
• Thermally enhanced package for improved heat dissipation

Advantages and Disadvantages

Advantages

• High power output
• Wide frequency coverage
• High efficiency
• Enhanced thermal performance

Disadvantages

• Higher cost compared to lower power transistors
• Requires careful thermal management due to high power dissipation

Working Principles

The MRF8P26080HSR5 operates on the principle of amplifying RF signals using a combination of active and passive components. It utilizes advanced semiconductor technology to achieve high power amplification with minimal distortion.

Detailed Application Field Plans

The MRF8P26080HSR5 is suitable for a wide range of RF power amplification applications, including: - Radar systems - Broadcast transmitters - Wireless communication infrastructure - Industrial heating systems - Medical equipment

Detailed and Complete Alternative Models

1. MRF6VP2600H

   • Frequency Range: 2110 - 2200 MHz
   • Power Output: 2600 Watts
   • Voltage: 50 Volts
   • Gain: 23 dB
   • Efficiency: 75%

2. MRF7S21110HSR3

   • Frequency Range: 1805 - 1880 MHz
   • Power Output: 110 Watts
   • Voltage: 32 Volts
   • Gain: 15 dB
   • Efficiency: 65%

3. MRF5S21130HSR5

   • Frequency Range: 2496 - 2690 MHz
   • Power Output: 130 Watts
   • Voltage: 28 Volts
   • Gain: 18 dB
   • Efficiency: 68%

In conclusion, the MRF8P26080HSR5 is a high-power RF transistor with excellent performance characteristics, making it suitable for a wide range of RF power amplification applications.

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