MRF8S26060HR3

Introduction

The MRF8S26060HR3 is a high-power RF transistor designed for use in various applications. This entry provides an overview of the product, including its category, use, characteristics, package, specifications, pin configuration, functional features, advantages and disadvantages, working principles, application field plans, and alternative models.

Product Overview

• Category: RF Transistor
• Use: Power amplification in RF applications
• Characteristics: High power, high frequency, rugged design
• Package: Hermetic ceramic package
• Essence: High-performance RF power transistor
• Packaging/Quantity: Individual units

Specifications

• Frequency Range: 2.5 - 2.7 GHz
• Output Power: 60 Watts
• Gain: 15 dB
• Efficiency: 55%
• Voltage: 32 V
• Current: 14 A
• Operating Temperature: -40°C to +150°C

Detailed Pin Configuration

The MRF8S26060HR3 features a detailed pin configuration with specific connections for input, output, biasing, and thermal management. Refer to the product datasheet for the complete pinout details.

Functional Features

• High power gain
• Broadband performance
• Excellent thermal stability
• High ruggedness and reliability

Advantages and Disadvantages

Advantages

• High power output
• Wide frequency range
• Rugged design for harsh environments
• Excellent thermal management

Disadvantages

• Higher cost compared to lower power transistors
• Specific thermal considerations required in design

Working Principles

The MRF8S26060HR3 operates on the principle of amplifying RF signals with high efficiency and power output. It utilizes advanced semiconductor technology to achieve high gain and linearity while maintaining ruggedness and reliability.

Detailed Application Field Plans

The MRF8S26060HR3 is suitable for various RF power amplification applications, including: - Radar systems - Communication transmitters - Industrial heating systems - Medical equipment

Detailed and Complete Alternative Models

• MRF8S26060HSR3
• MRF8S26060HSR5
• MRF8S26060HSR6
• MRF8S26060HSR7

In conclusion, the MRF8S26060HR3 is a high-performance RF power transistor designed for demanding applications that require high power output, wide frequency coverage, and rugged construction.

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