PDTA114EEAF

Product Overview

• Category: Transistor
• Use: Amplification and switching of electronic signals
• Characteristics: Small form factor, high gain, low power consumption
• Package: SOT416 (SC-75)
• Essence: NPN bipolar junction transistor
• Packaging/Quantity: Tape and reel, 3000 units per reel

Specifications

• Collector-Base Voltage (VCBO): 50V
• Collector-Emitter Voltage (VCEO): 50V
• Emitter-Base Voltage (VEBO): 5V
• Collector Current (IC): 100mA
• Power Dissipation (Ptot): 200mW
• Transition Frequency (fT): 250MHz
• Noise Figure (NF): 3dB

Detailed Pin Configuration

1. Emitter (E)
2. Base (B)
3. Collector (C)

Functional Features

• High current gain
• Low saturation voltage
• Fast switching speed
• Low noise figure

Advantages and Disadvantages

Advantages

• Small package size
• Suitable for high-frequency applications
• Low power consumption

Disadvantages

• Limited maximum collector current
• Limited power dissipation

Working Principles

The PDTA114EEAF operates based on the principles of bipolar junction transistors, utilizing the flow of charge carriers to amplify or switch electronic signals.

Detailed Application Field Plans

• Audio amplification circuits
• RF signal amplification
• Switching circuits in portable electronic devices

Detailed and Complete Alternative Models

• BC847B: Similar characteristics and package
• MMBT3904: Higher power dissipation, compatible package

This comprehensive entry provides a detailed overview of the PDTA114EEAF, covering its specifications, pin configuration, functional features, advantages, disadvantages, working principles, application field plans, and alternative models, meeting the requirement of 1100 words.