ON Semiconductor
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BFR31LT1G
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BFR31LT1G

Product Overview

Category

BFR31LT1G belongs to the category of RF transistors.

Use

It is commonly used in high-frequency applications such as RF amplifiers and oscillators.

Characteristics

  • High frequency capability
  • Low noise figure
  • High gain

Package

BFR31LT1G is available in a small SOT-23 package.

Essence

The essence of BFR31LT1G lies in its ability to amplify high-frequency signals with low noise and high gain.

Packaging/Quantity

It is typically sold in reels containing 3000 units.

Specifications

  • Frequency Range: 5 MHz to 6 GHz
  • Gain: 12 dB
  • Noise Figure: 1.2 dB
  • Power Dissipation: 250 mW
  • Voltage Rating: 20 V

Detailed Pin Configuration

BFR31LT1G has three pins: 1. Base (B) 2. Emitter (E) 3. Collector (C)

Functional Features

  • High-frequency amplification
  • Low noise performance
  • Wide frequency range coverage

Advantages

  • Excellent high-frequency performance
  • Low noise figure
  • Small package size

Disadvantages

  • Limited power handling capability
  • Higher cost compared to general-purpose transistors

Working Principles

BFR31LT1G operates based on the principles of bipolar junction transistors, where it amplifies RF signals by controlling the flow of current between its terminals.

Detailed Application Field Plans

BFR31LT1G finds extensive use in the following applications: - RF amplifiers - Oscillators - Communication systems - Radar systems

Detailed and Complete Alternative Models

Some alternative models to BFR31LT1G include: - BFR30LT1G - BFR32LT1G - BFR33LT1G

In conclusion, BFR31LT1G is a high-frequency RF transistor known for its low noise figure and high gain, making it suitable for various RF applications.

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قم بإدراج 10 أسئلة وإجابات شائعة تتعلق بتطبيق BFR31LT1G في الحلول التقنية

  1. What is BFR31LT1G?

    • BFR31LT1G is a high-performance NPN bipolar junction transistor (BJT) designed for general-purpose amplifier and switching applications.

  2. What are the key features of BFR31LT1G?

    • The key features of BFR31LT1G include low noise, high gain, low power dissipation, and high current gain.

  3. What are the typical applications of BFR31LT1G?

    • Typical applications of BFR31LT1G include RF amplifiers, oscillators, mixers, and low-noise amplifiers in wireless communication systems.

  4. What is the maximum collector current of BFR31LT1G?

    • The maximum collector current of BFR31LT1G is 100mA.

  5. What is the maximum power dissipation of BFR31LT1G?

    • The maximum power dissipation of BFR31LT1G is 300mW.

  6. What is the operating frequency range of BFR31LT1G?

    • The operating frequency range of BFR31LT1G is typically up to several gigahertz.

  7. What is the voltage rating of BFR31LT1G?

    • The voltage rating of BFR31LT1G is typically around 20V.

  8. Is BFR31LT1G suitable for low-noise amplifier applications?

    • Yes, BFR31LT1G is well-suited for low-noise amplifier applications due to its low noise figure.

  9. Can BFR31LT1G be used in battery-powered devices?

    • Yes, BFR31LT1G's low power dissipation makes it suitable for use in battery-powered devices.

  10. Are there any specific layout considerations for using BFR31LT1G in PCB designs?

    • It is recommended to follow best practices for RF layout design, such as minimizing trace lengths and optimizing grounding, when incorporating BFR31LT1G into PCB designs for RF applications.