BUV27G

Introduction

The BUV27G is a power transistor belonging to the category of discrete semiconductor devices. This device is commonly used in electronic circuits for various applications due to its specific characteristics and performance.

Basic Information Overview

• Category: Discrete Semiconductor Device
• Use: Power Transistor
• Characteristics: High power dissipation, low collector-emitter saturation voltage
• Package: TO-220AB
• Essence: Power amplification and switching
• Packaging/Quantity: Typically available in reels or tubes containing multiple units

Specifications

The BUV27G features the following specifications: - Collector-Emitter Voltage (Vce): 400V - Collector Current (Ic): 10A - Power Dissipation (Pd): 125W - DC Current Gain (hFE): 15-60 - Transition Frequency (ft): 4MHz

Detailed Pin Configuration

The BUV27G has a standard TO-220AB package with three pins: 1. Collector (C) 2. Base (B) 3. Emitter (E)

Functional Features

• High voltage capability
• Low saturation voltage
• Fast switching speed
• Robust construction for reliability

Advantages and Disadvantages

Advantages

• Suitable for high-power applications
• Low power dissipation
• Fast response time

Disadvantages

• Limited current gain range
• Higher cost compared to some alternative models

Working Principles

The BUV27G operates based on the principles of bipolar junction transistors, utilizing the control of current flow between its terminals to amplify or switch electrical signals.

Detailed Application Field Plans

The BUV27G is commonly used in the following application fields: - Power supplies - Motor control - Audio amplifiers - Switching regulators

Detailed and Complete Alternative Models

Some alternative models to the BUV27G include: - BUV27A - BUV27B - BUV27C - BUV27D

In summary, the BUV27G is a versatile power transistor suitable for various high-power applications, offering advantages such as low power dissipation and fast switching speed. However, it is important to consider its limited current gain range and higher cost compared to alternative models when selecting it for a specific application.

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