ON Semiconductor
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FDG6316P
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FDG6316P

Product Overview

Category

The FDG6316P belongs to the category of power MOSFETs.

Use

It is used as a switching device in various electronic circuits and applications.

Characteristics

  • Low on-resistance
  • High-speed switching
  • Low gate charge
  • Enhanced ruggedness

Package

The FDG6316P is available in a compact and efficient package suitable for surface mount applications.

Essence

The essence of the FDG6316P lies in its ability to provide efficient and reliable power switching capabilities in electronic devices.

Packaging/Quantity

The FDG6316P is typically packaged in reels or tubes, with varying quantities based on manufacturer specifications.

Specifications

  • Drain-Source Voltage (Vdss): 30V
  • Continuous Drain Current (Id): 9.7A
  • RDS(ON) (Max) @ VGS = 10V: 0.022Ω
  • Gate-Source Voltage (Vgs): ±20V
  • Total Power Dissipation (PD): 1.3W

Detailed Pin Configuration

The FDG6316P features a standard three-pin configuration: 1. Gate (G) 2. Drain (D) 3. Source (S)

Functional Features

  • Fast switching speed
  • Low gate drive power
  • Enhanced thermal performance
  • ESD protection

Advantages and Disadvantages

Advantages

  • Low on-resistance for reduced power loss
  • High-speed switching for improved efficiency
  • Compact package for space-constrained designs

Disadvantages

  • Sensitivity to static discharge
  • Limited voltage and current handling compared to higher-rated MOSFETs

Working Principles

The FDG6316P operates based on the principle of field-effect transistors, utilizing the control of an electric field to modulate the conductivity of the channel between the drain and source terminals.

Detailed Application Field Plans

The FDG6316P finds application in various fields including: - Power management in portable electronics - Motor control in consumer appliances - LED lighting systems - DC-DC converters

Detailed and Complete Alternative Models

Some alternative models to the FDG6316P include: - IRF3708PBF - FDP8870 - SI2319DS-T1-GE3

In conclusion, the FDG6316P offers a balance of performance and compactness, making it suitable for a wide range of electronic applications.

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قم بإدراج 10 أسئلة وإجابات شائعة تتعلق بتطبيق FDG6316P في الحلول التقنية

  1. What is FDG6316P?

    • FDG6316P is a P-channel PowerTrench® MOSFET designed for applications such as load switching and power management.

  2. What is the maximum drain-source voltage of FDG6316P?

    • The maximum drain-source voltage of FDG6316P is 20V.

  3. What is the typical on-resistance of FDG6316P?

    • The typical on-resistance of FDG6316P is 50mΩ at VGS = -4.5V.

  4. What are the typical applications of FDG6316P?

    • Typical applications of FDG6316P include battery protection, load switching, and power management in portable electronics.

  5. What is the maximum continuous drain current of FDG6316P?

    • The maximum continuous drain current of FDG6316P is 12A.

  6. What is the operating temperature range of FDG6316P?

    • The operating temperature range of FDG6316P is -55°C to 150°C.

  7. Does FDG6316P have built-in ESD protection?

    • Yes, FDG6316P has built-in ESD protection, making it suitable for robust applications.

  8. Is FDG6316P RoHS compliant?

    • Yes, FDG6316P is RoHS compliant, meeting environmental standards.

  9. What is the package type of FDG6316P?

    • FDG6316P is available in a compact and efficient Power33 package.

  10. Can FDG6316P be used in automotive applications?

    • Yes, FDG6316P can be used in automotive applications where its performance characteristics meet the requirements.