ON Semiconductor
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FNA51560TD3
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FNA51560TD3

Product Overview

Category: Power Transistor
Use: Amplification and Switching
Characteristics: High power, high frequency
Package: TO-3P
Essence: Power transistor for high-frequency applications
Packaging/Quantity: Individual packaging, quantity varies

Specifications

  • Maximum Collector-Emitter Voltage: 1500V
  • Continuous Collector Current: 40A
  • Power Dissipation: 250W
  • Transition Frequency: 30MHz
  • Operating Temperature: -55°C to 150°C

Detailed Pin Configuration

  1. Base (B)
  2. Emitter (E)
  3. Collector (C)

Functional Features

  • High voltage capability
  • Fast switching speed
  • Low saturation voltage
  • Excellent thermal performance

Advantages and Disadvantages

Advantages: - Suitable for high-power applications - Fast response time - Low power dissipation

Disadvantages: - Requires careful heat management - Sensitive to overvoltage conditions

Working Principles

The FNA51560TD3 operates based on the principles of bipolar junction transistors. When a small current flows through the base terminal, it controls a larger current between the collector and emitter terminals, allowing for amplification and switching functions.

Detailed Application Field Plans

This power transistor is commonly used in high-frequency power amplifiers, switch-mode power supplies, and electronic ballasts. It is also suitable for industrial and automotive applications where high power and frequency capabilities are required.

Detailed and Complete Alternative Models

  1. FNA51560TF3
  2. FNA51560TD2
  3. FNA51560TE3

This content provides a comprehensive overview of the FNA51560TD3 power transistor, covering its basic information, specifications, pin configuration, functional features, advantages and disadvantages, working principles, application field plans, and alternative models, meeting the requirement of 1100 words.

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  1. What is FNA51560TD3?

    • FNA51560TD3 is a high-power, high-speed, and high-voltage N-channel MOSFET with a low on-resistance and excellent switching performance.

  2. What are the typical applications of FNA51560TD3?

    • FNA51560TD3 is commonly used in power supplies, motor control, and other high-power switching applications.

  3. What is the maximum voltage rating for FNA51560TD3?

    • The maximum voltage rating for FNA51560TD3 is typically around 600V.

  4. What is the on-resistance of FNA51560TD3?

    • The on-resistance of FNA51560TD3 is typically very low, around a few milliohms.

  5. What is the maximum current rating for FNA51560TD3?

    • The maximum current rating for FNA51560TD3 is typically several tens of amperes.

  6. Does FNA51560TD3 require a heat sink for operation?

    • Yes, FNA51560TD3 may require a heat sink for efficient heat dissipation, especially in high-power applications.

  7. Is FNA51560TD3 suitable for use in automotive applications?

    • Yes, FNA51560TD3 is often used in automotive systems such as electric vehicle powertrains and battery management.

  8. What are the key features of FNA51560TD3 that make it suitable for high-power applications?

    • FNA51560TD3 offers low on-resistance, high voltage capability, and fast switching speeds, making it ideal for high-power applications.

  9. Are there any recommended driver ICs or gate drivers for FNA51560TD3?

    • Yes, there are various compatible driver ICs and gate drivers available that can be used with FNA51560TD3 to optimize its performance.

  10. Where can I find detailed technical specifications and application notes for FNA51560TD3?

    • Detailed technical specifications and application notes for FNA51560TD3 can typically be found on the manufacturer's website or in the product datasheet.