FQB32N20CTM
Introduction
The FQB32N20CTM is a power MOSFET belonging to the category of electronic components used in power management and control applications. This device offers unique characteristics and features that make it suitable for various electronic systems.
Basic Information Overview
- Category: Power MOSFET
- Use: Power management and control
- Characteristics: High voltage capability, low on-resistance, fast switching speed
- Package: TO-263
- Essence: Efficient power handling
- Packaging/Quantity: Typically available in reels or tubes containing multiple units
Specifications
- Voltage Rating: 200V
- Current Rating: 32A
- On-Resistance: 0.08 ohms
- Gate Threshold Voltage: 2-4V
- Operating Temperature Range: -55°C to 175°C
Detailed Pin Configuration
The FQB32N20CTM typically features a standard pin configuration with the following pins: 1. Gate (G) 2. Drain (D) 3. Source (S)
Functional Features
- High voltage capability allows for use in various power applications
- Low on-resistance minimizes power loss and improves efficiency
- Fast switching speed enables rapid control of power flow
Advantages and Disadvantages
Advantages
- Efficient power handling
- Low power dissipation
- Fast response time
Disadvantages
- Sensitive to static electricity
- Requires careful handling during installation
Working Principles
The FQB32N20CTM operates based on the principles of field-effect transistors, utilizing the control of electric fields to modulate the conductivity of the semiconductor material. When a sufficient voltage is applied to the gate terminal, the device allows current to flow between the drain and source terminals, effectively controlling the power flow in the circuit.
Detailed Application Field Plans
The FQB32N20CTM finds application in various fields including: - Switching power supplies - Motor control - Inverters - LED lighting - Audio amplifiers
Detailed and Complete Alternative Models
Some alternative models to the FQB32N20CTM include: - IRF3205 - STP80NF70 - FDP8870
In conclusion, the FQB32N20CTM power MOSFET offers high voltage capability, low on-resistance, and fast switching speed, making it suitable for diverse power management and control applications.
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What is the maximum drain-source voltage of FQB32N20CTM?
- The maximum drain-source voltage of FQB32N20CTM is 200 volts.
What is the continuous drain current rating of FQB32N20CTM?
- The continuous drain current rating of FQB32N20CTM is 32 amperes.
What is the on-state resistance (RDS(on)) of FQB32N20CTM?
- The on-state resistance (RDS(on)) of FQB32N20CTM is typically 0.08 ohms.
Can FQB32N20CTM be used in high-frequency switching applications?
- Yes, FQB32N20CTM is suitable for high-frequency switching applications due to its low RDS(on) and fast switching characteristics.
What type of package does FQB32N20CTM come in?
- FQB32N20CTM is available in a TO-263 (D2PAK) package.
Is FQB32N20CTM suitable for use in automotive applications?
- Yes, FQB32N20CTM is designed to meet the requirements for automotive applications, including power management and motor control.
What is the thermal resistance of FQB32N20CTM?
- The thermal resistance of FQB32N20CTM is typically 1.25°C/W.
Does FQB32N20CTM have built-in protection features?
- FQB32N20CTM does not have built-in protection features and may require external circuitry for overcurrent or overvoltage protection.
What are the recommended operating temperature range for FQB32N20CTM?
- The recommended operating temperature range for FQB32N20CTM is -55°C to 175°C.
Can FQB32N20CTM be used in parallel to increase current handling capability?
- Yes, FQB32N20CTM can be used in parallel to increase current handling capability in high-power applications. However, proper attention should be given to current sharing and thermal management.