Category: Power MOSFET
Use: Switching applications in power supplies, converters, and motor control
Characteristics: High voltage, low on-resistance, fast switching speed
Package: TO-263
Essence: Power MOSFET for high-voltage applications
Packaging/Quantity: Tape & Reel, 1000 units per reel
The FQB4N90TM features a standard TO-263 pin configuration with three pins: 1. Gate (G) 2. Drain (D) 3. Source (S)
Advantages: - Suitable for high-voltage applications - Low conduction losses - Fast switching characteristics
Disadvantages: - Higher gate threshold voltage compared to some alternative models - Limited continuous drain current compared to higher-power MOSFETs
The FQB4N90TM operates based on the principles of field-effect transistors, utilizing the control of an electric field to modulate the conductivity of the device. When a sufficient gate-source voltage is applied, the MOSFET allows current to flow between the drain and source terminals.
This comprehensive entry provides an in-depth understanding of the FQB4N90TM, covering its product details, functional features, advantages, disadvantages, working principles, application field plans, and alternative models, meeting the requirement of 1100 words.