FQP9N50C - Semiconductor Device Encyclopedia Entry

Introduction

The FQP9N50C is a power MOSFET belonging to the category of semiconductor devices. This entry provides an overview of the product, including its basic information, specifications, pin configuration, functional features, advantages and disadvantages, working principles, application field plans, and alternative models.

Basic Information Overview

• Category: Power MOSFET
• Use: The FQP9N50C is commonly used in power supply applications, motor control, and other high voltage switching circuits.
• Characteristics: It exhibits low on-resistance, high switching speed, and low gate charge, making it suitable for high efficiency and high frequency applications.
• Package: TO-220
• Essence: The FQP9N50C is designed to provide efficient power management and control in various electronic systems.
• Packaging/Quantity: Typically packaged in tubes or reels containing a specific quantity per package.

Specifications

• Voltage Rating: 500V
• Current Rating: 9A
• On-Resistance (Max): 0.8Ω
• Gate Charge (Typ): 30nC
• Operating Temperature Range: -55°C to 150°C

Detailed Pin Configuration

The FQP9N50C typically has three pins: 1. Gate (G): Input terminal for controlling the switching operation. 2. Drain (D): Output terminal connected to the load. 3. Source (S): Common terminal connected to the ground or return path.

Functional Features

• High Voltage Capability: The FQP9N50C can withstand high voltage levels, making it suitable for use in high-power applications.
• Low On-Resistance: This feature minimizes power losses and improves efficiency in power management systems.
• Fast Switching Speed: Enables rapid switching transitions, essential for high-frequency applications.

Advantages and Disadvantages

Advantages

• Efficient Power Management: The device offers low on-resistance and high voltage capability, contributing to efficient power handling.
• High Switching Speed: Facilitates rapid switching, beneficial for applications requiring high frequency operation.

Disadvantages

• Sensitivity to Overvoltage: Care must be taken to ensure that the device is not subjected to voltages exceeding its rating to prevent damage.

Working Principles

The FQP9N50C operates based on the principle of field-effect transistors, where the voltage applied to the gate terminal controls the flow of current between the drain and source terminals. By modulating the gate voltage, the device can efficiently regulate the power flow in the circuit.

Detailed Application Field Plans

The FQP9N50C finds extensive use in various applications, including: - Power Supplies: Utilized in switch-mode power supplies for efficient voltage regulation. - Motor Control: Employed in motor drive circuits for controlling the speed and direction of motors. - Lighting Systems: Used in high-intensity discharge lamp ballasts for efficient power management.

Detailed and Complete Alternative Models

Some alternative models to the FQP9N50C include: - IRF840: A similar power MOSFET with a voltage rating of 500V and a current rating of 8A. - STP9NK50ZFP: Offers comparable characteristics with a voltage rating of 500V and a current rating of 9A.

In conclusion, the FQP9N50C power MOSFET serves as a crucial component in power management and control systems, offering high efficiency and reliability in various applications.

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