FQU2N50BTU

Product Overview

Category

The FQU2N50BTU belongs to the category of power MOSFETs.

Use

It is used as a switching device in various electronic circuits and applications.

Characteristics

• High voltage capability
• Low on-resistance
• Fast switching speed
• Low gate charge

Package

The FQU2N50BTU is typically available in a TO-3P package.

Essence

This MOSFET is essential for controlling high-power loads in electronic systems.

Packaging/Quantity

The FQU2N50BTU is usually packaged individually and comes in varying quantities depending on the supplier.

Specifications

• Drain-Source Voltage (VDS): 500V
• Continuous Drain Current (ID): 2A
• On-Resistance (RDS(on)): 4.5Ω
• Gate-Source Voltage (VGS): ±30V
• Total Gate Charge (Qg): 18nC
• Operating Temperature Range: -55°C to 150°C

Detailed Pin Configuration

The FQU2N50BTU has three pins: 1. Drain (D) 2. Source (S) 3. Gate (G)

Functional Features

• High voltage capability allows it to handle large loads.
• Low on-resistance minimizes power loss and heat generation.
• Fast switching speed enables efficient control of switching applications.

Advantages

• Suitable for high-voltage applications
• Low power dissipation
• Fast switching performance

Disadvantages

• Relatively higher gate charge compared to some alternative models
• Limited continuous drain current compared to higher-rated MOSFETs

Working Principles

The FQU2N50BTU operates based on the principles of field-effect transistors, where the voltage applied to the gate terminal controls the flow of current between the drain and source terminals.

Detailed Application Field Plans

The FQU2N50BTU is commonly used in: - Switching power supplies - Motor control circuits - Inverters and converters - Electronic ballasts

Detailed and Complete Alternative Models

Some alternative models to the FQU2N50BTU include: - IRF840 - STP16NF06L - FQP27P06

In conclusion, the FQU2N50BTU power MOSFET offers high voltage capability, low on-resistance, and fast switching speed, making it suitable for various high-power electronic applications. While it has advantages such as low power dissipation and fast switching performance, it also has limitations in terms of gate charge and continuous drain current. Understanding its specifications, pin configuration, functional features, and application field plans can help in effectively utilizing this component in electronic designs.

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