HUF75631S3S
Product Overview
- Category: Power MOSFET
- Use: Switching applications in power supplies, motor control, and other high-current switching circuits.
- Characteristics: High voltage capability, low gate charge, fast switching speed.
- Package: TO-220AB
- Essence: N-channel enhancement mode power MOSFET
- Packaging/Quantity: Available in reels of 1000 units.
Specifications
- Drain-Source Voltage (Vdss): 75V
- Continuous Drain Current (Id): 75A
- Rds(on) Max @ Vgs = 10V: 8.5mΩ
- Gate-Source Threshold Voltage (Vgs(th)): 2V to 4V
- Power Dissipation (Pd): 200W
Detailed Pin Configuration
- Gate (G)
- Drain (D)
- Source (S)
Functional Features
- Low on-resistance
- Fast switching speed
- Low gate charge
- Avalanche energy specified
Advantages
- High voltage capability
- Low gate charge
- Suitable for high-current switching circuits
Disadvantages
- Higher Rds(on) compared to some alternative models
- Larger package size compared to SMD alternatives
Working Principles
The HUF75631S3S operates based on the principles of field-effect transistors, utilizing the voltage applied to the gate terminal to control the flow of current between the drain and source terminals.
Detailed Application Field Plans
- Power supplies
- Motor control systems
- High-current switching circuits
Detailed and Complete Alternative Models
- IRF540N
- Category: Power MOSFET
- Use: Similar switching applications
- Characteristics: Lower voltage capability, higher Rds(on)
- FDP8878
- Category: Power MOSFET
- Use: Comparable switching applications
- Characteristics: Lower voltage capability, faster switching speed
This completes the English editing encyclopedia entry structure format for HUF75631S3S, covering its product details, specifications, pin configuration, functional features, advantages and disadvantages, working principles, application field plans, and alternative models.
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What is HUF75631S3S?
- HUF75631S3S is a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) commonly used in electronic circuits for switching and amplification.
What are the key specifications of HUF75631S3S?
- The key specifications include a drain-source voltage of 75V, a continuous drain current of 75A, and a low on-resistance.
How can HUF75631S3S be used in technical solutions?
- HUF75631S3S can be used in various technical solutions such as power supplies, motor control, LED lighting, and automotive applications.
What are the advantages of using HUF75631S3S in technical solutions?
- Some advantages include high current handling capability, low on-resistance, and efficient switching performance.
Are there any application notes or reference designs available for HUF75631S3S?
- Yes, there are application notes and reference designs provided by the manufacturer to guide the implementation of HUF75631S3S in different technical solutions.
What are the typical operating conditions for HUF75631S3S?
- Typical operating conditions include a specified gate-source voltage, temperature range, and maximum power dissipation.
Can HUF75631S3S be used in high-frequency applications?
- While HUF75631S3S has fast switching characteristics, it's important to consider its frequency limitations and associated capacitances for high-frequency applications.
What are the recommended thermal management practices for HUF75631S3S?
- Proper heat sinking and thermal management techniques should be employed to ensure the MOSFET operates within its specified temperature limits.
Does HUF75631S3S require any special driving considerations?
- It's important to drive HUF75631S3S with appropriate gate voltage levels and drive circuitry to ensure optimal performance and reliability.
Where can I find reliable sources for purchasing HUF75631S3S for my technical solutions?
- Reliable sources for purchasing HUF75631S3S include authorized distributors and manufacturers' official channels to ensure authenticity and quality.