KSD261GBU Encyclopedia Entry

Product Overview

Category

The KSD261GBU belongs to the category of semiconductor devices, specifically a silicon NPN epitaxial planar transistor.

Use

It is commonly used as an amplifier or switch in electronic circuits.

Characteristics

• High voltage capability
• Low collector saturation voltage
• Complementary to KSB1560BU

Package

The KSD261GBU comes in a TO-126 package.

Essence

This transistor is essential for amplifying and switching signals in electronic circuits.

Packaging/Quantity

Typically packaged in reels with quantities varying based on manufacturer specifications.

Specifications

• Collector-Base Voltage (VCBO): 60V
• Collector-Emitter Voltage (VCEO): 50V
• Emitter-Base Voltage (VEBO): 6V
• Collector Current (IC): 1.5A
• Power Dissipation (PD): 2W
• Transition Frequency (fT): 150MHz
• Operating Temperature Range: -55°C to 150°C

Detailed Pin Configuration

1. Emitter (E)
2. Base (B)
3. Collector (C)

Functional Features

• High voltage capability allows for versatile circuit design.
• Low collector saturation voltage ensures efficient operation.
• Complementary to KSB1560BU for use in push-pull configurations.

Advantages

• Versatile application in amplification and switching circuits.
• Low power dissipation and high transition frequency enhance performance.

Disadvantages

• Limited maximum collector current compared to some alternative models.
• May require heat sinking for high-power applications.

Working Principles

The KSD261GBU operates based on the principles of bipolar junction transistors, utilizing the flow of charge carriers to amplify or switch electronic signals.

Detailed Application Field Plans

The KSD261GBU is suitable for use in audio amplifiers, signal processing circuits, and general-purpose switching applications. Its high voltage capability makes it particularly useful in designs requiring higher voltage handling.

Detailed and Complete Alternative Models

• KSD262GBU
• 2N3904
• BC547

In conclusion, the KSD261GBU is a versatile semiconductor device with high voltage capability and low collector saturation voltage, making it suitable for various amplification and switching applications across different industries.

(Word count: 324)