ON Semiconductor
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MJD50T4G
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MJD50T4G

Product Overview

Category

The MJD50T4G belongs to the category of power transistors.

Use

It is commonly used in electronic circuits for switching and amplification applications.

Characteristics

  • High voltage capability
  • Low spread of dynamic parameters
  • Very high switching speed

Package

The MJD50T4G is available in a TO-252 package.

Essence

This power transistor is essential for controlling and amplifying electrical signals in various electronic devices.

Packaging/Quantity

The MJD50T4G is typically packaged in reels or tubes, with quantities varying based on manufacturer specifications.

Specifications

  • Collector-Emitter Voltage (VCEO): 80V
  • Collector Current (IC): 8A
  • Total Power Dissipation (PT): 2W
  • Transition Frequency (FT): 30MHz

Detailed Pin Configuration

The MJD50T4G has a standard pin configuration with three pins: collector, base, and emitter.

Functional Features

  • High voltage capability allows for use in various applications
  • Low spread of dynamic parameters ensures consistent performance
  • Very high switching speed enables rapid response in circuit operations

Advantages

  • Suitable for high voltage applications
  • Consistent performance due to low spread of dynamic parameters
  • Fast switching speed enhances efficiency in electronic circuits

Disadvantages

  • Limited power dissipation capacity compared to other power transistors
  • May require additional heat management in high-power applications

Working Principles

The MJD50T4G operates based on the principles of bipolar junction transistors, utilizing the control of current flow between its terminals to amplify or switch electronic signals.

Detailed Application Field Plans

The MJD50T4G is widely used in: - Switching power supplies - Motor control circuits - Audio amplifiers - LED lighting applications

Detailed and Complete Alternative Models

  • MJD50T4
  • MJD50T4G
  • MJD50T4G

Note: The alternative models listed are similar variants within the same product family.

This content provides an overview of the MJD50T4G power transistor, including its basic information, specifications, functional features, advantages, disadvantages, working principles, application field plans, and alternative models.

قم بإدراج 10 أسئلة وإجابات شائعة تتعلق بتطبيق MJD50T4G في الحلول التقنية

  1. What is the MJD50T4G?

    • The MJD50T4G is a NPN Darlington Power Transistor designed for high-voltage applications.

  2. What are the key features of the MJD50T4G?

    • The MJD50T4G features a high DC current gain, low collector-emitter saturation voltage, and built-in zener diode protection.

  3. What are the typical applications of the MJD50T4G?

    • Typical applications include power management in industrial and consumer products, motor control, and solenoid/relay driving.

  4. What is the maximum collector current of the MJD50T4G?

    • The maximum collector current is 8A.

  5. What is the maximum collector-emitter voltage of the MJD50T4G?

    • The maximum collector-emitter voltage is 60V.

  6. What is the thermal resistance of the MJD50T4G?

    • The thermal resistance from junction to case is 3.13°C/W.

  7. Is the MJD50T4G RoHS compliant?

    • Yes, the MJD50T4G is RoHS compliant.

  8. What is the operating temperature range of the MJD50T4G?

    • The operating temperature range is -55°C to 150°C.

  9. Does the MJD50T4G require external protection components?

    • No, the MJD50T4G has a built-in zener diode for protection.

  10. Can the MJD50T4G be used in automotive applications?

    • Yes, the MJD50T4G is suitable for automotive applications such as motor control and power management.