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MPS651RLRMG

MPS651RLRMG

Product Overview

Category

The MPS651RLRMG belongs to the category of small-signal transistors.

Use

It is commonly used in low-power amplification and switching applications.

Characteristics

  • Low power dissipation
  • High current gain
  • Small package size

Package

The MPS651RLRMG is typically available in a TO-92 package.

Essence

This transistor is essential for amplifying weak signals in electronic circuits.

Packaging/Quantity

It is usually packaged in reels with a quantity of 1000 units per reel.

Specifications

  • Collector-Base Voltage (VCBO): 60V
  • Collector-Emitter Voltage (VCEO): 45V
  • Emitter-Base Voltage (VEBO): 5V
  • Collector Current (IC): 500mA
  • Power Dissipation (PD): 625mW
  • Transition Frequency (ft): 100MHz
  • Operating Temperature Range: -55°C to 150°C

Detailed Pin Configuration

  1. Emitter (E)
  2. Base (B)
  3. Collector (C)

Functional Features

  • High current gain
  • Low noise
  • Fast switching speed

Advantages

  • Small package size
  • Suitable for low-power applications
  • Wide operating temperature range

Disadvantages

  • Limited power dissipation capability
  • Lower voltage and current ratings compared to larger transistors

Working Principles

The MPS651RLRMG operates based on the principles of bipolar junction transistors, where the flow of current is controlled by the application of a small input signal at the base terminal, resulting in a larger output current at the collector terminal.

Detailed Application Field Plans

This transistor is widely used in: - Audio amplifiers - Signal processing circuits - Switching circuits - Oscillator circuits

Detailed and Complete Alternative Models

  • 2N3904
  • BC547
  • 2N2222
  • BC548

In conclusion, the MPS651RLRMG is a small-signal transistor with versatile applications in low-power electronic circuits. Its compact size and high current gain make it suitable for various amplification and switching tasks, although its limitations in power dissipation should be considered when selecting alternative models for higher power applications.

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قم بإدراج 10 أسئلة وإجابات شائعة تتعلق بتطبيق MPS651RLRMG في الحلول التقنية

  1. What is the MPS651RLRMG transistor used for?

    • The MPS651RLRMG is a general-purpose PNP bipolar junction transistor commonly used in amplification and switching applications.
  2. What are the key specifications of the MPS651RLRMG transistor?

    • The MPS651RLRMG has a maximum collector-emitter voltage of 60V, a continuous collector current of 500mA, and a power dissipation of 625mW.
  3. Can the MPS651RLRMG be used for audio amplifier circuits?

    • Yes, the MPS651RLRMG can be used in low-power audio amplifier circuits due to its moderate voltage and current handling capabilities.
  4. Is the MPS651RLRMG suitable for switching applications?

    • Yes, the MPS651RLRMG can be used in low-power switching applications such as signal routing and control.
  5. What are the typical operating conditions for the MPS651RLRMG?

    • The MPS651RLRMG operates within a temperature range of -55°C to 150°C and is typically used with a base current of 50mA.
  6. Can the MPS651RLRMG be used in voltage regulator circuits?

    • While it's not typically used in voltage regulator circuits, the MPS651RLRMG can be employed in certain low-power voltage regulation applications.
  7. Does the MPS651RLRMG require a heat sink for normal operation?

    • In most cases, the MPS651RLRMG does not require a heat sink for normal operation due to its moderate power dissipation.
  8. What are some common alternatives to the MPS651RLRMG transistor?

    • Common alternatives to the MPS651RLRMG include the BC557, 2N3906, and 2N4403 transistors, which offer similar characteristics.
  9. Can the MPS651RLRMG be used in high-frequency applications?

    • The MPS651RLRMG is not well-suited for high-frequency applications due to its moderate frequency response and transition frequency.
  10. Are there any specific layout considerations when using the MPS651RLRMG in a circuit?

    • It's important to minimize lead lengths and keep the base and collector connections close together to reduce parasitic capacitance and inductance effects.