MPSH34_D75Z

Product Overview

Category: Transistor
Use: Amplification and switching in electronic circuits
Characteristics: High voltage, low current, small signal transistor
Package: SOT-23
Essence: NPN silicon epitaxial planar transistor
Packaging/Quantity: Tape and reel, 3000 units per reel

Specifications

Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 250mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 5mA, 10V
Transition Frequency: 300MHz

Detailed Pin Configuration

The MPSH34_D75Z transistor has three pins: 1. Emitter (E) 2. Base (B) 3. Collector (C)

Functional Features

High voltage capability
Low leakage current
Fast switching speed
Small package size

Advantages and Disadvantages

Advantages

Suitable for high voltage applications
Compact SOT-23 package
Low leakage current

Disadvantages

Relatively low DC current gain compared to other transistors
Limited power dissipation capability

Working Principles

The MPSH34_D75Z operates as a semiconductor device, utilizing the movement of charge carriers within a semiconductor material to amplify or switch electronic signals. When a small current is applied to the base terminal, it controls the larger current flow between the collector and emitter terminals.

Detailed Application Field Plans

The MPSH34_D75Z is commonly used in the following applications: - Audio amplifiers - Signal amplification in sensor circuits - Switching circuits in electronic control systems

Detailed and Complete Alternative Models

Some alternative models to the MPSH34_D75Z include: - BC547 - 2N3904 - 2N2222

This completes the entry for MPSH34_D75Z, providing comprehensive information on its category, use, characteristics, specifications, pin configuration, functional features, advantages and disadvantages, working principles, application field plans, and alternative models.

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What is the MPSH34_D75Z used for?
- The MPSH34_D75Z is a high-speed switching transistor commonly used in RF and microwave applications.
What are the key specifications of the MPSH34_D75Z?
- The MPSH34_D75Z has a maximum collector-emitter voltage of 30V, a maximum collector current of 500mA, and a transition frequency of 4GHz.
In what types of technical solutions is the MPSH34_D75Z typically employed?
- The MPSH34_D75Z is often used in amplifier circuits, oscillators, mixers, and other high-frequency applications.
What are the advantages of using the MPSH34_D75Z in technical designs?
- The MPSH34_D75Z offers high speed, low noise, and excellent high-frequency performance, making it suitable for demanding RF and microwave applications.
Are there any specific considerations when designing with the MPSH34_D75Z?
- Designers should pay attention to proper biasing, impedance matching, and thermal management to ensure optimal performance of the MPSH34_D75Z.
Can the MPSH34_D75Z be used in low-power applications?
- Yes, the MPSH34_D75Z can be utilized in low-power circuits, but its high-frequency capabilities are particularly advantageous in higher power applications.
What are some alternative components to the MPSH34_D75Z?
- Alternatives to the MPSH34_D75Z include similar high-speed transistors such as the MMBTH10 or the BFR93A.
How can I maximize the performance of the MPSH34_D75Z in my circuit?
- Proper layout design, controlled impedance traces, and careful consideration of parasitic elements can help optimize the performance of the MPSH34_D75Z.
Is the MPSH34_D75Z suitable for use in harsh environments?
- While the MPSH34_D75Z is not specifically designed for harsh environments, it can withstand typical operating conditions in controlled environments.
Where can I find detailed application notes for using the MPSH34_D75Z in technical solutions?
- Detailed application notes for the MPSH34_D75Z can be found on the manufacturer's website or in technical literature related to RF and microwave circuit design.