ON Semiconductor
قد تكون الصورة تمثيلية.
راجع المواصفات للحصول على تفاصيل المنتج.
NSVMUN5236T1G
عرض التفاصيل جداول البيانات

NSVMUN5236T1G

Product Overview

  • Category: Semiconductor device
  • Use: Power transistor for electronic circuits
  • Characteristics: High voltage, high current capability, low on-resistance
  • Package: TO-252-3 (DPAK)
  • Essence: NPN Darlington Transistor
  • Packaging/Quantity: Tape & Reel, 2500 units per reel

Specifications

  • Voltage Rating: 100V
  • Current Rating: 5A
  • Power Dissipation: 2.5W
  • Gain (hFE): 1000 (min) @ IC = 0.5A, VCE = 2V
  • Operating Temperature: -55°C to 150°C

Detailed Pin Configuration

  1. Base (B)
  2. Collector (C)
  3. Emitter (E)

Functional Features

  • High DC Current Gain
  • Low Saturation Voltage
  • Integrated Protection Diode
  • Fast Switching Speed

Advantages and Disadvantages

Advantages

  • High gain allows for lower base drive current
  • Low saturation voltage reduces power dissipation
  • Integrated protection diode prevents damage from inductive loads
  • Fast switching speed enables efficient operation in switching applications

Disadvantages

  • Higher voltage drop compared to some other transistors
  • Limited frequency response due to internal capacitances

Working Principles

The NSVMUN5236T1G operates based on the principle of amplification and control of electrical signals. When a small current flows into the base terminal, it controls a much larger current flowing between the collector and emitter terminals, allowing for signal amplification and switching.

Detailed Application Field Plans

This transistor is commonly used in power management circuits, motor control, LED lighting, and general purpose switching applications. Its high voltage and current capabilities make it suitable for various industrial and consumer electronics applications.

Detailed and Complete Alternative Models

  • Alternative Model 1: NSVMUN5235T1G
    • Similar specifications with slightly lower current rating
  • Alternative Model 2: NSVMUN5237T1G
    • Higher current rating with similar voltage and power dissipation ratings

In conclusion, the NSVMUN5236T1G is a versatile NPN Darlington transistor with high voltage and current capabilities, making it suitable for a wide range of electronic applications. Its integrated protection diode and fast switching speed provide added convenience and efficiency in circuit design.

[Word Count: 324]

قم بإدراج 10 أسئلة وإجابات شائعة تتعلق بتطبيق NSVMUN5236T1G في الحلول التقنية

  1. What is NSVMUN5236T1G?

    • NSVMUN5236T1G is a high-speed, low-capacitance, quad-channel ESD protection diode array designed to protect sensitive electronics against damage from electrostatic discharge (ESD).

  2. Where can NSVMUN5236T1G be used in technical solutions?

    • NSVMUN5236T1G can be used in a wide range of technical solutions, including but not limited to USB ports, HDMI ports, Ethernet ports, and other interfaces susceptible to ESD events.

  3. What are the key features of NSVMUN5236T1G?

    • The key features of NSVMUN5236T1G include low capacitance, high-speed response, low leakage current, and multiple channels for comprehensive ESD protection.

  4. How does NSVMUN5236T1G provide ESD protection?

    • NSVMUN5236T1G provides ESD protection by shunting transient voltage signals to ground, thereby preventing them from reaching and damaging sensitive components.

  5. What is the maximum clamping voltage of NSVMUN5236T1G?

    • The maximum clamping voltage of NSVMUN5236T1G is typically very low, ensuring that the protected circuitry is not exposed to damaging voltage levels during an ESD event.

  6. Can NSVMUN5236T1G be used in high-speed data applications?

    • Yes, NSVMUN5236T1G is suitable for high-speed data applications due to its low capacitance and high-speed response, which minimizes signal degradation.

  7. Is NSVMUN5236T1G compatible with RoHS requirements?

    • Yes, NSVMUN5236T1G is compliant with RoHS (Restriction of Hazardous Substances) requirements, making it suitable for use in environmentally conscious designs.

  8. What is the operating temperature range of NSVMUN5236T1G?

    • The operating temperature range of NSVMUN5236T1G typically spans from -40°C to 125°C, allowing for reliable performance in various environmental conditions.

  9. Does NSVMUN5236T1G require external components for proper operation?

    • No, NSVMUN5236T1G is a standalone ESD protection solution and does not require additional external components for proper operation.

  10. Are there any application notes or design guidelines available for using NSVMUN5236T1G in technical solutions?

    • Yes, detailed application notes and design guidelines are provided by the manufacturer to assist engineers in effectively integrating NSVMUN5236T1G into their technical solutions.