NTMS4N01R2G
Product Overview
Category
The NTMS4N01R2G belongs to the category of power MOSFETs.
Use
It is used as a switching device in various electronic circuits and applications.
Characteristics
- Low on-resistance
- High current capability
- Fast switching speed
- Low gate drive power
- Enhanced ruggedness
Package
The NTMS4N01R2G is available in a TO-220 package.
Essence
The essence of this product lies in its ability to efficiently control and switch high currents in electronic circuits.
Packaging/Quantity
It is typically packaged in reels or tubes, with varying quantities depending on the supplier.
Specifications
- Drain-Source Voltage (VDS): 55V
- Continuous Drain Current (ID): 4A
- RDS(ON) (Max) @ VGS = 10V: 0.065Ω
- Gate-Source Voltage (VGS) (Max): ±20V
- Total Power Dissipation (PD): 25W
Detailed Pin Configuration
The NTMS4N01R2G has three pins: 1. Gate (G) 2. Drain (D) 3. Source (S)
Functional Features
- Low on-resistance for minimal power loss
- Fast switching speed for efficient operation
- High current capability for versatile applications
- Enhanced ruggedness for reliability in harsh conditions
Advantages and Disadvantages
Advantages
- Efficient power handling
- Fast response times
- Versatile application range
Disadvantages
- Sensitive to static electricity
- Requires careful handling during installation
Working Principles
The NTMS4N01R2G operates based on the principles of field-effect transistors, utilizing the control of electric fields to modulate the conductivity of the semiconductor material.
Detailed Application Field Plans
The NTMS4N01R2G finds applications in various fields such as: - Switching power supplies - Motor control - LED lighting - Battery management systems - Audio amplifiers
Detailed and Complete Alternative Models
Some alternative models to NTMS4N01R2G include: - IRF540N - FQP30N06L - STP55NF06L
In conclusion, the NTMS4N01R2G power MOSFET offers efficient power handling, fast switching speeds, and versatility in various electronic applications, making it a valuable component in modern electronic designs.
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What is NTMS4N01R2G?
- NTMS4N01R2G is a high-speed, low-side N-channel power MOSFET designed for automotive applications.
What are the key features of NTMS4N01R2G?
- The key features include a low on-resistance, high-speed switching capability, and suitability for automotive systems.
What is the maximum voltage and current rating for NTMS4N01R2G?
- The maximum voltage rating is typically around 40V, and the maximum continuous drain current is approximately 4A.
In what technical solutions can NTMS4N01R2G be used?
- NTMS4N01R2G can be used in various automotive applications such as motor control, power distribution, and lighting systems.
What are the thermal characteristics of NTMS4N01R2G?
- The MOSFET has a low thermal resistance and is designed to operate within specified temperature ranges for automotive environments.
Does NTMS4N01R2G have built-in protection features?
- Yes, it may include protection features such as overcurrent protection and thermal shutdown to ensure safe operation in automotive systems.
What are the recommended operating conditions for NTMS4N01R2G?
- It is typically recommended to operate within a certain voltage range and temperature limits to ensure optimal performance and reliability.
Can NTMS4N01R2G be used in conjunction with microcontrollers or other control devices?
- Yes, it can be easily integrated into control circuits and driven by microcontrollers or other control devices commonly used in automotive systems.
Are there any application notes or reference designs available for NTMS4N01R2G?
- Yes, the manufacturer typically provides application notes and reference designs to assist in the implementation of NTMS4N01R2G in technical solutions.
Where can I find detailed technical specifications and documentation for NTMS4N01R2G?
- Detailed technical specifications and documentation can usually be found on the manufacturer's website or through authorized distributors.