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NTMSD3P303R2G

NTMSD3P303R2G

Introduction

NTMSD3P303R2G is a semiconductor product belonging to the category of power MOSFETs. This device is widely used in various electronic applications due to its unique characteristics and performance.

Basic Information Overview

  • Category: Power MOSFET
  • Use: Electronic applications requiring power switching
  • Characteristics: High efficiency, low on-resistance, fast switching speed
  • Package: TO-252-3
  • Essence: Efficient power management
  • Packaging/Quantity: Available in reels of 3000 units

Specifications

The NTMSD3P303R2G features the following specifications: - Drain-Source Voltage (VDS): 30V - Continuous Drain Current (ID): 8A - RDS(ON) Max @ VGS = 10V: 24mΩ - Gate-Source Voltage (VGS) Max: ±20V - Total Gate Charge (Qg): 13nC - Operating Temperature Range: -55°C to 150°C

Detailed Pin Configuration

The NTMSD3P303R2G has a standard pin configuration for a TO-252-3 package: 1. Source (S) 2. Gate (G) 3. Drain (D)

Functional Features

  • Low on-resistance for minimal power dissipation
  • Fast switching speed for efficient power management
  • High current handling capability for diverse applications

Advantages and Disadvantages

Advantages: - High efficiency - Low on-resistance - Fast switching speed

Disadvantages: - Limited voltage and current ratings compared to higher-power devices

Working Principles

The NTMSD3P303R2G operates based on the principles of field-effect transistors, utilizing the control of the gate voltage to regulate the flow of current between the drain and source terminals.

Detailed Application Field Plans

This power MOSFET is suitable for a wide range of applications, including but not limited to: - Switching power supplies - Motor control - LED lighting - Battery management systems - DC-DC converters

Detailed and Complete Alternative Models

Some alternative models to NTMSD3P303R2G include: - NTMSD3P304R2G - NTMSD3P302R2G - NTMSD3P301R2G

In conclusion, the NTMSD3P303R2G power MOSFET offers high efficiency, fast switching speed, and low on-resistance, making it an ideal choice for various electronic applications requiring power management.

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