R1LV0108ESF-7SI#S0

Product Overview

Category: Integrated Circuit (IC)

Use: Memory device

Characteristics: - High-speed operation - Low power consumption - Small package size - Wide temperature range (-40°C to +85°C) - RoHS compliant

Package: SOP (Small Outline Package)

Essence: The R1LV0108ESF-7SI#S0 is a high-performance memory IC designed for various applications that require fast and reliable data storage.

Packaging/Quantity: The R1LV0108ESF-7SI#S0 is typically sold in reels, with each reel containing a specific quantity of ICs. The exact quantity may vary depending on the manufacturer's specifications.

Specifications

• Memory Type: Static Random Access Memory (SRAM)
• Organization: 128K words x 8 bits
• Supply Voltage: 2.5V - 3.6V
• Access Time: 70 ns
• Standby Current: 10 µA (typical)
• Operating Temperature Range: -40°C to +85°C
• Package Dimensions: 150 mil (width) x 225 mil (length)

Detailed Pin Configuration

The R1LV0108ESF-7SI#S0 has a total of 28 pins. Here is the detailed pin configuration:

1. Vcc (Power supply)
2. A0-A16 (Address inputs)
3. DQ0-DQ7 (Data inputs/outputs)
4. /WE (Write enable)
5. /OE (Output enable)
6. /CE (Chip enable)
7. /UB/LB (Upper byte/lower byte control)
8. /BYTE (Byte control)
9. /CS1 (Chip select 1)
10. /CS2 (Chip select 2)
11. /CS3 (Chip select 3)
12. /CS4 (Chip select 4)
13. /CS5 (Chip select 5)
14. /CS6 (Chip select 6)
15. /CS7 (Chip select 7)
16. GND (Ground)

Functional Features

• High-speed operation allows for quick data access and retrieval.
• Low power consumption makes it suitable for battery-powered devices.
• Small package size enables space-efficient designs.
• Wide temperature range ensures reliable performance in various environments.
• RoHS compliance ensures environmental friendliness.

Advantages and Disadvantages

Advantages: - Fast and reliable data storage - Low power consumption - Compact size - Suitable for a wide range of applications - Environmentally friendly

Disadvantages: - Limited storage capacity compared to other memory technologies - Relatively higher cost per bit compared to some alternatives

Working Principles

The R1LV0108ESF-7SI#S0 is based on Static Random Access Memory (SRAM) technology. It stores data using flip-flops, which retain their state as long as power is supplied. The IC uses address inputs to specify the location of data and provides data outputs when requested. The write enable (/WE) and output enable (/OE) signals control the read and write operations.

Detailed Application Field Plans

The R1LV0108ESF-7SI#S0 can be used in various applications that require high-speed and reliable data storage, such as: - Computer systems - Networking equipment - Industrial automation - Automotive electronics - Consumer electronics

Detailed and Complete Alternative Models

• R1LV0108ESP-7SI#S0
• R1LV0108ESD-7SI#S0
• R1LV0108ESN-7SI#S0
• R1LV0108ESB-7SI#S0

These alternative models offer similar specifications and functionality to the R1LV0108ESF-7SI#S0, providing flexibility in choosing the most suitable option for specific applications.

Note: The above content is a sample entry and may not reflect actual product details. Please refer to the manufacturer's documentation for accurate information.