GP1S73P2J00F

Product Overview

• Category: Optoelectronics
• Use: Optical sensor for detecting objects
• Characteristics: High sensitivity, compact size, low power consumption
• Package: Surface mount package
• Essence: Infrared LED and phototransistor in a single package
• Packaging/Quantity: Tape and reel packaging, 2500 units per reel

Specifications

• Operating Wavelength: 950nm
• Output Type: Phototransistor
• Output Configuration: NPN
• Voltage - Collector Emitter Breakdown (Max): 30V
• Current - Collector (Ic) (Max): 50mA
• Voltage - Collector Emitter Saturation (Max): 400mV
• Response Time: 4µs

Detailed Pin Configuration

1. Anode (LED)
2. Cathode (LED)
3. Collector (Phototransistor)
4. Emitter (Phototransistor)

Functional Features

• Integrated infrared LED and phototransistor
• High sensitivity to infrared light
• Fast response time
• Compact and easy to integrate into designs

Advantages and Disadvantages

Advantages

• Compact size
• Low power consumption
• High sensitivity

Disadvantages

• Limited operating range
• Susceptible to ambient light interference

Working Principles

The GP1S73P2J00F operates on the principle of detecting the presence or absence of an object by emitting and receiving infrared light. When an object is within the detection range, it reflects the emitted infrared light back to the phototransistor, causing it to conduct and produce an output signal.

Detailed Application Field Plans

The GP1S73P2J00F is widely used in various applications such as: - Object detection in printers and copiers - Paper detection in automatic document feeders - Proximity sensing in consumer electronics - Industrial automation for detecting parts on conveyor belts

Detailed and Complete Alternative Models

• GP1S53VJ000F
• GP1S56VJ000F
• GP1S58VJ000F
• GP1S59VJ000F

This completes the entry for GP1S73P2J00F, providing comprehensive information about its product details, specifications, features, and applications.

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