LH28F160S5HT-L70

Product Overview

Category

The LH28F160S5HT-L70 belongs to the category of flash memory devices.

Use

This product is primarily used for data storage in various electronic devices such as smartphones, tablets, digital cameras, and portable media players.

Characteristics

• High storage capacity: The LH28F160S5HT-L70 offers a storage capacity of 160 megabits (20 megabytes), allowing for ample space to store data.
• Fast data transfer rate: With a high-speed interface, this flash memory device enables quick data transfer between the device and the host system.
• Reliable performance: The LH28F160S5HT-L70 ensures reliable data storage and retrieval, minimizing the risk of data loss or corruption.
• Low power consumption: This flash memory device is designed to consume minimal power, making it suitable for battery-powered devices.
• Compact package: The LH28F160S5HT-L70 comes in a compact form factor, allowing for easy integration into various electronic devices.

Packaging/Quantity

The LH28F160S5HT-L70 is typically packaged in a surface-mount package, which facilitates its installation on printed circuit boards (PCBs). It is commonly available in reels containing a specific quantity of units, typically ranging from hundreds to thousands, depending on the manufacturer's specifications.

Specifications

• Storage Capacity: 160 megabits (20 megabytes)
• Interface: Serial Peripheral Interface (SPI)
• Supply Voltage: 2.7V - 3.6V
• Operating Temperature Range: -40°C to +85°C
• Package Type: TSOP (Thin Small Outline Package)

Detailed Pin Configuration

The LH28F160S5HT-L70 has a total of 8 pins, each serving a specific function:

1. VCC: Power supply voltage input
2. GND: Ground connection
3. HOLD: Hold input for suspending data transfer
4. WP: Write Protect input for protecting the memory content from being modified
5. SCK: Serial Clock input for synchronizing data transfer
6. SI: Serial Data Input for receiving data from the host system
7. SO: Serial Data Output for transmitting data to the host system
8. CS: Chip Select input for enabling the device during data transfer

Functional Features

• Erase and Program Operations: The LH28F160S5HT-L70 supports both erase and program operations, allowing for flexible data management.
• Sector Architecture: The flash memory is divided into multiple sectors, enabling selective erasure and programming of specific sections.
• Error Correction Code (ECC): This feature ensures data integrity by detecting and correcting errors that may occur during data transfer or storage.
• Wear-Leveling Algorithm: The LH28F160S5HT-L70 incorporates a wear-leveling algorithm to evenly distribute write and erase cycles across the memory cells, prolonging the lifespan of the device.

Advantages and Disadvantages

Advantages

• High storage capacity enables ample data storage.
• Fast data transfer rate facilitates quick access to stored information.
• Reliable performance minimizes the risk of data loss or corruption.
• Low power consumption makes it suitable for battery-powered devices.
• Compact package allows for easy integration into various electronic devices.

Disadvantages

• Limited storage capacity compared to higher-end flash memory devices.
• Relatively slower data transfer rate compared to some other flash memory technologies.

Working Principles

The LH28F160S5HT-L70 utilizes NAND flash memory technology. It stores data in a series of memory cells organized in a grid-like structure. Each memory cell can store multiple bits of information using a combination of electrical charges. To read or write data, the device applies specific voltage levels to the memory cells and interprets the resulting electrical states.

Detailed Application Field Plans

The LH28F160S5HT-L70 finds applications in various electronic devices that require non-volatile data storage. Some common application fields include: - Smartphones and tablets - Digital cameras - Portable media players - Automotive infotainment systems - Industrial control systems

Detailed and Complete Alternative Models

1. LH28F160BJHE-BTLZD: Similar flash memory device with a higher storage capacity of 256 megabits (32 megabytes).
2. LH28F320BJHE-BTLZD: Flash memory device with double the storage capacity of the LH28F160S5HT-L70, offering 320 megabits (40 megabytes) of storage.
3. LH28F640BFHE-PBTLZD: Higher-end flash memory device with a storage capacity of 640 megabits (80 megabytes), suitable for applications requiring larger storage space.

These alternative models provide options with varying storage capacities to cater to different application requirements.

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