M95256-DRDW3TP/K

Product Overview

Category

M95256-DRDW3TP/K belongs to the category of non-volatile memory chips.

Use

This product is primarily used for storing and retrieving data in electronic devices.

Characteristics

• Non-volatile: The M95256-DRDW3TP/K retains stored data even when power is removed.
• High capacity: This chip has a storage capacity of 256 kilobits.
• Fast access time: It offers quick data retrieval with low latency.
• Low power consumption: The M95256-DRDW3TP/K is designed to operate efficiently with minimal power usage.

Package

The M95256-DRDW3TP/K is available in a compact and durable package, suitable for integration into various electronic devices.

Essence

The essence of this product lies in its ability to provide reliable and persistent data storage in a small form factor.

Packaging/Quantity

The M95256-DRDW3TP/K is typically packaged in reels or trays, with a quantity of 2500 units per reel/tray.

Specifications

• Memory Type: EEPROM (Electrically Erasable Programmable Read-Only Memory)
• Capacity: 256 kilobits (32 kilobytes)
• Interface: Serial Peripheral Interface (SPI)
• Operating Voltage: 2.5V - 5.5V
• Operating Temperature Range: -40°C to +85°C
• Data Retention: Up to 200 years
• Write Endurance: 1 million write cycles

Detailed Pin Configuration

The M95256-DRDW3TP/K follows the standard pin configuration for SPI EEPROM chips:

1. Chip Select (/CS)
2. Serial Clock (SCK)
3. Serial Data Input (SI/MOSI)
4. Serial Data Output (SO/MISO)
5. Write Protect (/WP)
6. Ground (GND)
7. Supply Voltage (VCC)
8. Serial Data Output (SO/MISO)

Functional Features

• Byte and Page Write Operations: The M95256-DRDW3TP/K supports both byte-level and page-level write operations, allowing for flexible data storage.
• Software Protection: It provides software-based write protection to prevent accidental modification of stored data.
• High-Speed Read: With a fast access time, this chip enables quick retrieval of stored information.
• Sequential Read: The M95256-DRDW3TP/K allows sequential read operations, enhancing data access efficiency.

Advantages and Disadvantages

Advantages

• Non-volatile memory ensures data retention even during power loss.
• Compact package size suitable for space-constrained applications.
• Low power consumption extends battery life in portable devices.
• High-speed read and write operations enhance overall system performance.

Disadvantages

• Limited storage capacity compared to other memory technologies.
• Relatively higher cost per unit compared to traditional non-volatile memory options.

Working Principles

The M95256-DRDW3TP/K utilizes EEPROM technology, which allows for electrically erasing and reprogramming of data. It stores information in a grid of memory cells, with each cell capable of holding one bit of data. When data is written, an electrical charge is applied to the appropriate memory cells, altering their state. This altered state can be read back later to retrieve the stored information.

Detailed Application Field Plans

The M95256-DRDW3TP/K finds applications in various electronic devices, including but not limited to: - Automotive systems - Industrial control systems - Consumer electronics - Medical devices - Communication equipment

Detailed and Complete Alternative Models

1. M95080-DRDW3TP/K: 8 kilobit (1 kilobyte) capacity EEPROM chip.
2. M95128-DRDW3TP/K: 128 kilobit (16 kilobytes) capacity EEPROM chip.
3. M95512-DRDW3TP/K: 512 kilobit (64 kilobytes) capacity EEPROM chip.
4. M95040-DRDW3TP/K: 4 kilobit (512 bytes) capacity EEPROM chip.

These alternative models offer different storage capacities to suit various application requirements.

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