قد تكون الصورة تمثيلية.
راجع المواصفات للحصول على تفاصيل المنتج.
STP18N65M2

STP18N65M2

Product Overview

Category

The STP18N65M2 belongs to the category of power MOSFETs.

Use

It is commonly used in power supply applications, motor control, and other high-power switching applications.

Characteristics

  • High voltage capability
  • Low input capacitance
  • Fast switching speed
  • Low on-resistance

Package

The STP18N65M2 is typically available in a TO-220 package.

Essence

The essence of the STP18N65M2 lies in its ability to efficiently handle high power and high voltage applications.

Packaging/Quantity

It is usually packaged in reels or tubes and is available in varying quantities depending on the supplier.

Specifications

  • Voltage Rating: 650V
  • Current Rating: 18A
  • RDS(ON): 0.25Ω
  • Gate Threshold Voltage: 3V
  • Total Gate Charge: 38nC
  • Operating Temperature Range: -55°C to 150°C

Detailed Pin Configuration

The STP18N65M2 typically has three pins: 1. Source (S) 2. Drain (D) 3. Gate (G)

Functional Features

  • High voltage capability allows for use in high-power applications.
  • Low input capacitance enables fast switching speeds.
  • Low on-resistance minimizes power loss and heat generation.

Advantages

  • Suitable for high voltage applications
  • Fast switching speed
  • Low on-resistance reduces power dissipation

Disadvantages

  • Higher gate threshold voltage compared to some alternative models
  • May require additional circuitry for driving the gate at higher frequencies

Working Principles

The STP18N65M2 operates based on the principles of field-effect transistors, utilizing the voltage applied to the gate to control the flow of current between the source and drain terminals.

Detailed Application Field Plans

The STP18N65M2 is well-suited for use in various applications including: - Power supplies - Motor control systems - High-power switching circuits

Detailed and Complete Alternative Models

Some alternative models to the STP18N65M2 include: - IRFP460: Similar voltage and current ratings - FDPF18N50: Lower voltage rating but similar current handling capabilities - IXFN18N100: Higher voltage rating with comparable current handling

This completes the English editing encyclopedia entry structure format for the STP18N65M2, providing comprehensive information about its product details, specifications, features, and application considerations.

قم بإدراج 10 أسئلة وإجابات شائعة تتعلق بتطبيق STP18N65M2 في الحلول التقنية

  1. What is the maximum drain-source voltage rating of STP18N65M2?

    • The maximum drain-source voltage rating of STP18N65M2 is 650 volts.
  2. What is the continuous drain current rating of STP18N65M2?

    • The continuous drain current rating of STP18N65M2 is 18 amperes.
  3. What is the on-state resistance (RDS(on)) of STP18N65M2?

    • The on-state resistance (RDS(on)) of STP18N65M2 is typically 0.165 ohms.
  4. What is the gate threshold voltage of STP18N65M2?

    • The gate threshold voltage of STP18N65M2 is typically 4 volts.
  5. What are the typical applications for STP18N65M2?

    • STP18N65M2 is commonly used in high power switching applications such as power supplies, motor control, and lighting systems.
  6. What is the operating temperature range of STP18N65M2?

    • The operating temperature range of STP18N65M2 is -55°C to 150°C.
  7. Does STP18N65M2 require a heat sink for operation?

    • Yes, STP18N65M2 typically requires a heat sink for efficient thermal management.
  8. Is STP18N65M2 suitable for use in automotive applications?

    • Yes, STP18N65M2 is suitable for use in automotive applications due to its high voltage and current handling capabilities.
  9. What are the recommended gate driver specifications for STP18N65M2?

    • It is recommended to use a gate driver capable of providing sufficient gate-source voltage and current to drive STP18N65M2 effectively.
  10. Are there any specific layout considerations when using STP18N65M2 in a circuit?

    • It is important to minimize parasitic inductance and ensure proper grounding to optimize the performance of STP18N65M2 in a circuit.