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BZT55C3V3 L0G

BZT55C3V3 L0G

Product Overview

Category

The BZT55C3V3 L0G belongs to the category of Zener diodes.

Use

It is commonly used for voltage regulation and protection in electronic circuits.

Characteristics

  • Zener voltage: 3.3V
  • Power dissipation: 500mW
  • Package type: SOD-80
  • Operating temperature range: -65°C to +200°C
  • Storage temperature range: -65°C to +200°C

Package

The BZT55C3V3 L0G is typically available in reels or tape and reel packaging.

Essence

The essence of the BZT55C3V3 L0G lies in its ability to maintain a constant voltage across its terminals, making it suitable for various voltage regulation applications.

Packaging/Quantity

It is usually packaged in quantities of 3000 units per reel.

Specifications

  • Zener voltage: 3.135V to 3.465V
  • Test current: 5mA
  • Reverse leakage current: 100nA
  • Maximum voltage regulation: 60mV

Detailed Pin Configuration

The BZT55C3V3 L0G has two pins, with the anode connected to the positive terminal and the cathode connected to the negative terminal.

Functional Features

  • Voltage regulation: The BZT55C3V3 L0G maintains a constant voltage across its terminals, providing stability in electronic circuits.
  • Overvoltage protection: It prevents excessive voltage from reaching sensitive components in a circuit, thereby safeguarding them from damage.

Advantages

  • Precise voltage regulation
  • Compact size
  • Wide operating temperature range

Disadvantages

  • Limited power dissipation capability
  • Sensitivity to temperature variations

Working Principles

The BZT55C3V3 L0G operates based on the principle of the Zener effect, where it allows current to flow in reverse bias once the voltage across its terminals reaches the specified Zener voltage.

Detailed Application Field Plans

The BZT55C3V3 L0G is widely used in: - Voltage regulators - Power supplies - Overvoltage protection circuits - Signal clamping circuits

Detailed and Complete Alternative Models

Some alternative models to the BZT55C3V3 L0G include: - BZX55C3V3 - 1N4728A - MMBZ5232BLT1G

In conclusion, the BZT55C3V3 L0G Zener diode offers precise voltage regulation and overvoltage protection, making it a valuable component in various electronic applications.

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قم بإدراج 10 أسئلة وإجابات شائعة تتعلق بتطبيق BZT55C3V3 L0G في الحلول التقنية

  1. What is the maximum power dissipation of BZT55C3V3 L0G?

    • The maximum power dissipation of BZT55C3V3 L0G is 500mW.
  2. What is the forward voltage drop of BZT55C3V3 L0G?

    • The forward voltage drop of BZT55C3V3 L0G is typically 0.9V at a forward current of 5mA.
  3. What is the reverse standoff voltage of BZT55C3V3 L0G?

    • The reverse standoff voltage of BZT55C3V3 L0G is 3.3V.
  4. What is the maximum reverse leakage current of BZT55C3V3 L0G?

    • The maximum reverse leakage current of BZT55C3V3 L0G is 0.1µA at the reverse voltage of 3.3V.
  5. What is the operating temperature range of BZT55C3V3 L0G?

    • The operating temperature range of BZT55C3V3 L0G is -65°C to +150°C.
  6. Can BZT55C3V3 L0G be used for voltage regulation in low-power applications?

    • Yes, BZT55C3V3 L0G can be used for voltage regulation in low-power applications due to its low forward voltage drop and stable characteristics.
  7. Is BZT55C3V3 L0G suitable for overvoltage protection in electronic circuits?

    • Yes, BZT55C3V3 L0G is suitable for overvoltage protection in electronic circuits due to its reverse standoff voltage and low leakage current.
  8. What are the typical applications of BZT55C3V3 L0G in technical solutions?

    • BZT55C3V3 L0G is commonly used in voltage clamping, voltage regulation, overvoltage protection, and signal conditioning in various technical solutions.
  9. Does BZT55C3V3 L0G require any external components for operation?

    • BZT55C3V3 L0G does not require any external components for basic operation, making it convenient for integration into circuit designs.
  10. Are there any specific layout considerations when using BZT55C3V3 L0G in a PCB design?

    • It is recommended to place BZT55C3V3 L0G close to the protected circuitry and minimize trace lengths to reduce parasitic inductance and ensure effective transient voltage suppression.