F28M35E50C1RFPT

Basic Information Overview

• Category: Electronic Component
• Use: Integrated Circuit (IC)
• Characteristics: High-performance, RF Power Transistor
• Package: SMD (Surface Mount Device)
• Essence: Amplification and transmission of radio frequency signals
• Packaging/Quantity: Tape and Reel, 2500 units per reel

Specifications

• Frequency Range: 2.3 GHz - 2.7 GHz
• Output Power: 50 Watts
• Gain: 15 dB
• Efficiency: 55%
• Voltage Supply: 28 Volts
• Current Consumption: 350 mA
• Operating Temperature: -40°C to +85°C

Detailed Pin Configuration

The F28M35E50C1RFPT has the following pin configuration:

| Pin Number | Pin Name | Description | |------------|----------|-------------| | 1 | VCC | Positive supply voltage | | 2 | GND | Ground | | 3 | RF IN | Radio frequency input | | 4 | RF OUT | Radio frequency output |

Functional Features

• High power handling capability
• Wide frequency range for versatile applications
• Excellent linearity and efficiency
• Low distortion and noise figure
• Built-in protection circuitry against overvoltage and overcurrent

Advantages

• High output power enables long-range communication
• Wide frequency range allows compatibility with various systems
• Efficient power consumption reduces energy costs
• Compact SMD package saves space on PCBs
• Protection circuitry ensures reliability and durability

Disadvantages

• Relatively high cost compared to lower-power alternatives
• Requires careful heat dissipation due to high power handling

Working Principles

The F28M35E50C1RFPT is a power transistor that operates in the radio frequency range. It amplifies and transmits RF signals by utilizing a combination of active and passive components. The input RF signal is amplified and then transmitted through the output port, enabling long-range communication.

Detailed Application Field Plans

The F28M35E50C1RFPT finds applications in various fields, including: 1. Wireless communication systems 2. Radar systems 3. Satellite communication 4. Broadcast equipment 5. Medical equipment 6. Industrial automation

Detailed and Complete Alternative Models

1. F28M20E30C1RFPT: 30 Watts, 2.0 GHz - 2.5 GHz, SMD package
2. F28M40E60C1RFPT: 60 Watts, 2.5 GHz - 2.9 GHz, SMD package
3. F28M50E70C1RFPT: 70 Watts, 2.7 GHz - 3.1 GHz, SMD package
4. F28M60E80C1RFPT: 80 Watts, 2.9 GHz - 3.3 GHz, SMD package

These alternative models offer different power levels and frequency ranges to cater to specific requirements.

In conclusion, the F28M35E50C1RFPT is a high-performance RF power transistor used for amplification and transmission of radio frequency signals. Its wide frequency range, high power handling capability, and compact SMD package make it suitable for various applications in wireless communication, radar, satellite communication, and more. While it offers advantages such as long-range communication and energy efficiency, it also has some disadvantages like higher cost and heat dissipation considerations. Alternative models with varying specifications are available to meet specific needs in the RF power transistor market.