LM5113TMX/NOPB

Product Overview

• Category: Integrated Circuit (IC)
• Use: Power Management
• Characteristics: High-speed, high-voltage gate driver
• Package: 8-pin SOIC (Small Outline Integrated Circuit)
• Essence: Efficiently drives high-side and low-side power MOSFETs or IGBTs in half-bridge or full-bridge configurations
• Packaging/Quantity: Available in tape and reel packaging, with 2500 units per reel

Specifications

• Input Voltage Range: -0.3V to 14V
• Output Voltage Range: -0.3V to 14V
• Supply Voltage Range: 4.5V to 14V
• Operating Temperature Range: -40°C to 125°C
• Switching Frequency: Up to 100 MHz
• Output Current: ±2A peak source/sink
• Propagation Delay: 25 ns (typical)

Pin Configuration

The LM5113TMX/NOPB has the following pin configuration:

1. VDD: Supply voltage input
2. HO: High-side gate drive output
3. LO: Low-side gate drive output
4. VB: Bootstrap supply voltage input
5. VSS: Ground reference
6. LIN: Logic input for low-side gate driver
7. HIN: Logic input for high-side gate driver
8. NC: No connection

Functional Features

• High-speed switching capability
• Wide input and output voltage range
• Integrated bootstrap diode for high-side gate drive
• Adaptive shoot-through protection
• Under-voltage lockout (UVLO) protection
• Thermal shutdown protection

Advantages

• Enables efficient and reliable switching of power MOSFETs or IGBTs
• High-speed switching capability allows for faster response times
• Wide input and output voltage range provides flexibility in various applications
• Integrated bootstrap diode simplifies circuit design
• Adaptive shoot-through protection prevents damaging cross-conduction
• UVLO and thermal shutdown protection enhance system safety

Disadvantages

• Limited to 8-pin SOIC package, which may not be suitable for all applications
• Requires external components for proper operation
• Higher cost compared to simpler gate driver solutions

Working Principles

The LM5113TMX/NOPB is designed to drive high-side and low-side power MOSFETs or IGBTs in half-bridge or full-bridge configurations. It utilizes a high-speed gate driver architecture to efficiently switch the power devices. The integrated bootstrap diode simplifies the circuit design by providing the necessary voltage for the high-side gate driver. The adaptive shoot-through protection prevents both high-side and low-side devices from conducting simultaneously, avoiding damaging cross-conduction.

Application Field Plans

The LM5113TMX/NOPB is commonly used in various applications, including:

1. Motor drives
2. Switch-mode power supplies
3. Solar inverters
4. Uninterruptible power supplies (UPS)
5. Electric vehicle charging systems

Alternative Models

Other alternative models that can be considered as substitutes for the LM5113TMX/NOPB include:

1. LM5109: High-voltage gate driver with similar features and specifications
2. IRS2186: Half-bridge gate driver IC with integrated bootstrap diode
3. FAN7380: High-speed, dual-channel gate driver for half-bridge applications

These alternative models offer similar functionality and can be evaluated based on specific application requirements.

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