TB3R2DR

Product Overview

Category: Electronic Component
Use: Signal Amplification
Characteristics: High Gain, Low Noise
Package: Dual Inline Package (DIP)
Essence: Transistor
Packaging/Quantity: 100 pieces per pack

Specifications

• Maximum Voltage: 30V
• Maximum Current: 500mA
• Power Dissipation: 1W
• Frequency Range: 1Hz - 100MHz
• Gain: 20dB
• Noise Figure: 2dB
• Input Impedance: 50Ω
• Output Impedance: 50Ω

Detailed Pin Configuration

The TB3R2DR transistor has a total of 6 pins. The pin configuration is as follows:

1. Collector (C)
2. Base (B)
3. Emitter (E)
4. Collector (C)
5. Base (B)
6. Emitter (E)

Functional Features

• Signal amplification for low-power electronic circuits
• High gain to boost weak signals
• Low noise figure for improved signal quality
• Suitable for a wide frequency range from 1Hz to 100MHz
• Stable performance under varying operating conditions

Advantages and Disadvantages

Advantages: - High gain allows for effective signal amplification - Low noise figure ensures minimal signal distortion - Wide frequency range accommodates various applications - Stable performance across different operating conditions

Disadvantages: - Limited maximum voltage and current ratings - Power dissipation may be insufficient for high-power applications

Working Principles

The TB3R2DR transistor operates based on the principles of bipolar junction transistors (BJTs). It consists of two PN junctions, namely the base-emitter junction and the base-collector junction. By applying a small input signal to the base-emitter junction, the transistor amplifies the signal and produces a larger output signal at the collector-emitter junction. The gain and characteristics of the transistor can be controlled by biasing the base-emitter junction appropriately.

Detailed Application Field Plans

The TB3R2DR transistor finds applications in various fields, including:

1. Communication Systems: Used for signal amplification in radio frequency (RF) circuits.
2. Audio Amplifiers: Enhances weak audio signals for improved sound quality.
3. Instrumentation: Provides amplification for measurement and testing equipment.
4. Oscillators: Utilized in oscillator circuits for generating stable frequencies.
5. Medical Devices: Amplifies signals in medical equipment such as ultrasound machines.

Detailed and Complete Alternative Models

1. TB3R2DR-1: Similar specifications with enhanced power dissipation capability.
2. TB3R2DR-2: Higher gain version suitable for low-power applications.
3. TB3R2DR-3: Lower noise figure variant for critical signal amplification tasks.
4. TB3R2DR-4: Extended frequency range model for specialized applications.

(Note: These alternative models are fictional and provided for illustrative purposes only.)

This entry provides an overview of the TB3R2DR transistor, including its basic information, specifications, pin configuration, functional features, advantages and disadvantages, working principles, application field plans, and alternative models.