VS-GB05XP120KTPBF

Product Category: Power Semiconductor

Basic Information Overview:

• Category: Power MOSFET
• Use: Voltage regulation and power switching in electronic circuits
• Characteristics: High voltage capability, low on-resistance, fast switching speed
• Package: TO-220AB
• Essence: Efficient power management and control
• Packaging/Quantity: Typically packaged in reels of 1000 units

Specifications:

• Voltage Rating: 1200V
• Current Rating: 5A
• On-Resistance: 0.35Ω
• Gate-Source Voltage (Max): ±20V
• Operating Temperature Range: -55°C to 175°C

Detailed Pin Configuration:

• Pin 1: Source
• Pin 2: Gate
• Pin 3: Drain

Functional Features:

• High voltage capability for power applications
• Low on-resistance for reduced power dissipation
• Fast switching speed for efficient power control

Advantages:

• Enhanced power management capabilities
• Reduced power losses
• Improved system efficiency

Disadvantages:

• Higher cost compared to lower voltage MOSFETs
• Requires careful handling due to high voltage rating

Working Principles:

The VS-GB05XP120KTPBF operates based on the principles of field-effect transistors, utilizing its gate-source voltage to control the flow of current between the drain and source terminals. When a suitable voltage is applied to the gate terminal, the device allows the passage of current, enabling efficient power regulation and switching.

Detailed Application Field Plans:

• Industrial motor drives
• Power supplies
• Renewable energy systems
• Electric vehicles
• UPS (Uninterruptible Power Supplies)

Detailed and Complete Alternative Models:

• IRF540N
• STP55NF06L
• FQP50N06L

This concludes the entry for VS-GB05XP120KTPBF, covering its product category, basic information overview, specifications, pin configuration, functional features, advantages and disadvantages, working principles, detailed application field plans, and alternative models.

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