2N6660-E3
Product Overview
The 2N6660-E3 is a power MOSFET belonging to the category of electronic components. It is commonly used in electronic circuits for switching and amplification applications due to its high voltage and current handling capabilities. The device exhibits characteristics such as low on-resistance, high input impedance, and fast switching speed. It is typically packaged in a TO-220AB package and is available in various quantities.
Specifications
- Drain-Source Voltage (VDS): 200V
- Continuous Drain Current (ID): 18A
- On-Resistance (RDS(on)): 0.25Ω
- Package Type: TO-220AB
- Quantity: Varies
Detailed Pin Configuration
The 2N6660-E3 features a standard three-pin configuration: 1. Gate (G) 2. Drain (D) 3. Source (S)
Functional Features
- High voltage capability
- Low on-resistance
- Fast switching speed
- High input impedance
Advantages and Disadvantages
Advantages: - Suitable for high-power applications - Low conduction losses - Fast switching times
Disadvantages: - Sensitivity to static electricity - Gate capacitance can affect high-frequency performance
Working Principles
The 2N6660-E3 operates based on the principles of field-effect transistors, where the voltage applied to the gate terminal controls the flow of current between the drain and source terminals. When a sufficient voltage is applied to the gate, the device enters the "on" state, allowing current to flow through it.
Detailed Application Field Plans
The 2N6660-E3 finds extensive use in various applications, including: - Power supplies - Motor control - Audio amplifiers - Switching circuits
Detailed and Complete Alternative Models
Some alternative models to the 2N6660-E3 include: - IRF540 - FQP30N06L - STP16NF06FP
In conclusion, the 2N6660-E3 power MOSFET offers high voltage and current handling capabilities, making it suitable for a wide range of electronic applications. Its low on-resistance and fast switching speed make it an ideal choice for power management and amplification tasks.
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What is the 2N6660-E3 transistor used for?
- The 2N6660-E3 is a high voltage, high speed N-channel enhancement-mode power MOSFET commonly used in switching applications.
What is the maximum drain-source voltage of the 2N6660-E3?
- The maximum drain-source voltage of the 2N6660-E3 is 200 volts.
What is the maximum drain current of the 2N6660-E3?
- The maximum drain current of the 2N6660-E3 is 5.3 amperes.
What are some typical applications of the 2N6660-E3?
- Typical applications include power supplies, DC-DC converters, motor control, and other high voltage switching applications.
What is the gate-source voltage range for the 2N6660-E3?
- The gate-source voltage range is typically ±20 volts.
What is the on-state resistance (RDS(on)) of the 2N6660-E3?
- The on-state resistance is typically around 1.2 ohms.
Is the 2N6660-E3 suitable for high frequency switching applications?
- Yes, the 2N6660-E3 is designed for high-speed switching applications.
What are the thermal characteristics of the 2N6660-E3?
- The thermal resistance from junction to case (RθJC) is typically 1.25°C/W.
Does the 2N6660-E3 require a heat sink in certain applications?
- Yes, in high power or high current applications, a heat sink may be required to dissipate heat effectively.
Are there any important considerations when driving the 2N6660-E3?
- It's important to ensure that the gate drive voltage and current are within the specified limits to avoid damaging the transistor. Additionally, attention should be paid to the switching characteristics to optimize performance.