IRFR320TRR
Product Overview
Category: Electronic Component
Use: Power MOSFET for switching applications
Characteristics: High voltage, low on-resistance, fast switching speed
Package: TO-252 (DPAK)
Essence: Power management
Packaging/Quantity: Tape & Reel, 2500 units per reel
Specifications
- Voltage Rating: 400V
- Continuous Drain Current: 2.7A
- On-Resistance: 1.6 Ohms
- Gate Threshold Voltage: 2V to 4V
- Power Dissipation: 2.5W
Detailed Pin Configuration
The IRFR320TRR follows the standard pin configuration for a TO-252 package: 1. Gate (G) 2. Drain (D) 3. Source (S)
Functional Features
- Fast switching speed for efficient power management
- Low on-resistance for minimal power loss
- High voltage rating for versatile applications
Advantages and Disadvantages
Advantages: - Efficient power management - Versatile voltage rating - Compact TO-252 package
Disadvantages: - Limited continuous drain current compared to other models - Higher on-resistance than some alternatives
Working Principles
The IRFR320TRR operates based on the principles of field-effect transistors, utilizing the gate voltage to control the flow of current between the drain and source terminals.
Detailed Application Field Plans
The IRFR320TRR is suitable for various switching applications in power supplies, lighting, motor control, and DC-DC converters. Its high voltage rating and fast switching speed make it ideal for systems requiring efficient power management.
Detailed and Complete Alternative Models
- IRFR3709Z: Higher continuous drain current and lower on-resistance
- IRFR024N: Lower voltage rating and faster switching speed
- IRFR5305: Higher voltage rating and lower on-resistance
In conclusion, the IRFR320TRR is a power MOSFET designed for efficient switching applications, offering a balance of voltage rating, on-resistance, and package size. Its specifications and functional features make it suitable for various power management applications, although alternative models with different characteristics are available for specific requirements.