SI1031R-T1-GE3

Introduction

The SI1031R-T1-GE3 is a high-performance N-channel MOSFET designed for various electronic applications. This entry provides an overview of the product, including its category, use, characteristics, package, specifications, pin configuration, functional features, advantages and disadvantages, working principles, application field plans, and alternative models.

Product Overview

Category

The SI1031R-T1-GE3 belongs to the category of power MOSFETs, specifically designed for switching applications in power supplies, motor control, and other electronic devices.

Use

It is commonly used as a switching element in electronic circuits to control the flow of current in various applications, such as voltage regulators, DC-DC converters, and motor drives.

Characteristics

• High power handling capability
• Low on-state resistance
• Fast switching speed
• Low gate drive requirements

Package

The SI1031R-T1-GE3 is typically available in a compact and efficient PowerPAK® SO-8 package, which offers low thermal resistance and high power density.

Essence

The essence of the SI1031R-T1-GE3 lies in its ability to provide efficient and reliable switching performance in a wide range of electronic applications.

Packaging/Quantity

The product is usually supplied in tape and reel packaging, with quantities varying based on customer requirements.

Specifications

• Drain-Source Voltage (VDS): 30V
• Continuous Drain Current (ID): 20A
• RDS(ON) (Max) @ VGS = 10V: 5.5mΩ
• Gate-Source Voltage (VGS) ±20V
• Total Gate Charge (Qg): 13nC
• Operating Temperature Range: -55°C to 150°C

Detailed Pin Configuration

The SI1031R-T1-GE3 features a standard SO-8 pin configuration: 1. Gate 2. Source 3. Source 4. Drain 5. Drain 6. Source 7. Source 8. Gate

Functional Features

• Low on-state resistance for minimal power dissipation
• Fast switching speed for improved efficiency
• Enhanced thermal performance for reliability in high-power applications
• Robust design for increased ruggedness and durability

Advantages and Disadvantages

Advantages

• High power handling capability
• Efficient switching performance
• Compact and thermally efficient package
• Wide operating temperature range

Disadvantages

• Sensitive to static discharge
• Requires careful handling during assembly

Working Principles

The SI1031R-T1-GE3 operates based on the principles of field-effect transistors, where the gate voltage controls the flow of current between the drain and source terminals. By modulating the gate voltage, the device can efficiently switch between on and off states, enabling precise control of current flow in electronic circuits.

Detailed Application Field Plans

The SI1031R-T1-GE3 is well-suited for a wide range of applications, including: - Voltage regulators - DC-DC converters - Motor control systems - Power management modules - Battery protection circuits

Detailed and Complete Alternative Models

• SI1032X-T1-GE3
• SI1033Y-T1-GE3
• SI1034Z-T1-GE3
• SI1035A-T1-GE3

In summary, the SI1031R-T1-GE3 is a versatile and high-performance MOSFET that offers efficient switching capabilities for various electronic applications. With its compact package, robust design, and excellent thermal performance, it is a preferred choice for designers seeking reliable and high-power switching solutions.

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