SI1405DL-T1-GE3

Product Overview

SI1405DL-T1-GE3 belongs to the category of power MOSFETs and is commonly used in electronic circuits for switching and amplification purposes. This MOSFET is known for its high efficiency, low on-resistance, and compact package design. It is typically packaged in a small outline (SOT-23) package and is available in tape and reel packaging with a quantity of 3000 units per reel.

Specifications

• Voltage Rating: 20V
• Continuous Drain Current: 4.3A
• On-Resistance: 0.014 Ohms
• Package Type: SOT-23
• Packaging: Tape and Reel, 3000 units per reel

Detailed Pin Configuration

The SI1405DL-T1-GE3 MOSFET has three pins: Gate (G), Drain (D), and Source (S). The pin configuration is as follows: - G (Gate) - Pin 1 - D (Drain) - Pin 2 - S (Source) - Pin 3

Functional Features

• High Efficiency: The MOSFET offers low on-resistance, resulting in minimal power loss during operation.
• Fast Switching Speed: It provides rapid switching capabilities, making it suitable for applications requiring quick response times.
• Compact Design: The SOT-23 package ensures a small footprint, ideal for space-constrained designs.

Advantages and Disadvantages

Advantages - Low On-Resistance - High Efficiency - Compact Package

Disadvantages - Limited Voltage Rating - Moderate Continuous Drain Current

Working Principles

The SI1405DL-T1-GE3 operates based on the principles of field-effect transistors, where the voltage applied to the gate terminal controls the flow of current between the drain and source terminals. When a sufficient voltage is applied to the gate, the MOSFET allows current to flow through, enabling its use in various electronic applications.

Detailed Application Field Plans

This MOSFET is widely used in low-voltage electronic circuits such as power management systems, battery protection circuits, load switches, and DC-DC converters. Its characteristics make it suitable for portable electronic devices, IoT applications, and other power-sensitive systems.

Detailed and Complete Alternative Models

• SI2305DS-T1-GE3
• SI2337DS-T1-GE3
• SI2365DS-T1-GE3

In conclusion, the SI1405DL-T1-GE3 power MOSFET offers high efficiency and compact design, making it an ideal choice for low-voltage electronic applications. While it has limitations in voltage rating and continuous drain current, its performance and form factor cater to a wide range of modern electronic designs.

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