SI1912EDH-T1-E3
Product Overview
- Category: Power MOSFET
- Use: Switching and amplification in power electronics applications
- Characteristics: High voltage, low on-resistance, fast switching speed
- Package: DFN (Dual Flat No-Lead)
- Essence: Efficient power management
- Packaging/Quantity: Tape & Reel, 3000 units per reel
Specifications
- Voltage Rating: 150V
- Current Rating: 30A
- On-Resistance: 18mΩ
- Gate Threshold Voltage: 2.5V
- Gate Charge: 40nC
- Operating Temperature Range: -55°C to 175°C
Detailed Pin Configuration
- Pin 1: Source
- Pin 2: Gate
- Pin 3: Drain
Functional Features
- Fast switching speed for improved efficiency
- Low on-resistance for reduced power dissipation
- High voltage rating for versatile applications
Advantages and Disadvantages
Advantages
- High voltage rating allows for use in a wide range of applications
- Low on-resistance results in minimal power loss
- Fast switching speed enhances overall system efficiency
Disadvantages
- Sensitive to overvoltage conditions
- Requires careful handling during assembly due to the small package size
Working Principles
The SI1912EDH-T1-E3 operates based on the principles of field-effect transistors, utilizing the gate voltage to control the flow of current between the drain and source terminals.
Detailed Application Field Plans
The SI1912EDH-T1-E3 is suitable for various power management applications, including: - DC-DC converters - Motor control - LED lighting - Battery management systems
Detailed and Complete Alternative Models
- SI1912EDH-T1-GE3: Similar specifications with enhanced ESD protection
- SI1912EDH-T1-RE3: Reduced on-resistance for higher efficiency
This comprehensive entry provides a detailed overview of the SI1912EDH-T1-E3 Power MOSFET, covering its basic information, specifications, pin configuration, functional features, advantages and disadvantages, working principles, application field plans, and alternative models.