SI2302ADS-T1-E3

Product Overview

Category

The SI2302ADS-T1-E3 belongs to the category of MOSFET transistors.

Use

It is commonly used as a switching device in electronic circuits, particularly in power management applications.

Characteristics

• Low on-resistance
• High current capability
• Small package size
• Low gate threshold voltage

Package

The SI2302ADS-T1-E3 is typically available in a small SOT-23 package.

Essence

This MOSFET transistor is essential for controlling the flow of power in various electronic devices and systems.

Packaging/Quantity

It is usually packaged in reels or tubes, with quantities varying based on manufacturer specifications.

Specifications

• Drain-Source Voltage (VDS): 20V
• Continuous Drain Current (ID): 2.6A
• On-Resistance (RDS(on)): 75mΩ
• Gate-Source Threshold Voltage (VGS(th)): 1-2.5V
• Power Dissipation (PD): 1.25W

Detailed Pin Configuration

The SI2302ADS-T1-E3 typically has three pins: Gate (G), Drain (D), and Source (S).

Functional Features

• Fast switching speed
• Low gate drive power required
• Enhanced thermal performance

Advantages and Disadvantages

Advantages

• Efficient power management
• Compact size
• Suitable for low-voltage applications

Disadvantages

• Limited maximum voltage and current ratings
• Sensitivity to static electricity

Working Principles

The SI2302ADS-T1-E3 operates based on the principles of field-effect transistors, where the voltage applied to the gate terminal controls the flow of current between the drain and source terminals.

Detailed Application Field Plans

The SI2302ADS-T1-E3 is widely used in: - Battery protection circuits - Portable electronic devices - DC-DC converters - Motor control systems

Detailed and Complete Alternative Models

• SI2301DS-T1-GE3
• SI2304ADS-T1-E3
• SI2305ADS-T1-E3

In conclusion, the SI2302ADS-T1-E3 MOSFET transistor offers efficient power management capabilities in a compact package, making it suitable for various low-voltage electronic applications.

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