SI2302CDS-T1-E3
Product Overview
Category
The SI2302CDS-T1-E3 belongs to the category of power MOSFETs.
Use
It is commonly used in various electronic circuits and applications that require switching or amplifying signals.
Characteristics
- Low on-resistance
- High current capability
- Fast switching speed
- Low gate drive voltage
- Small package size
Package
The SI2302CDS-T1-E3 is typically available in a small SOT-23 package.
Essence
This MOSFET is essential for controlling power flow in electronic devices and circuits.
Packaging/Quantity
It is usually supplied in reels with a specific quantity per reel, such as 3000 units per reel.
Specifications
- Drain-Source Voltage (VDS): 20V
- Continuous Drain Current (ID): 2.9A
- On-Resistance (RDS(on)): 75mΩ
- Power Dissipation (PD): 1.25W
- Gate-Source Voltage (VGS): ±8V
Detailed Pin Configuration
The SI2302CDS-T1-E3 has three pins: 1. Source (S) 2. Gate (G) 3. Drain (D)
Functional Features
- Low power consumption
- High efficiency
- Reliable performance
- Suitable for battery-operated devices
Advantages
- Small form factor
- Low heat generation
- Enhanced system reliability
- Cost-effective solution for power management
Disadvantages
- Limited maximum voltage and current ratings
- Sensitivity to electrostatic discharge (ESD)
Working Principles
The SI2302CDS-T1-E3 operates based on the principles of field-effect transistors, where the voltage applied to the gate terminal controls the flow of current between the drain and source terminals.
Detailed Application Field Plans
This MOSFET is widely used in: - Battery protection circuits - DC-DC converters - Load switches - Motor control circuits - LED lighting applications
Detailed and Complete Alternative Models
Some alternative models to the SI2302CDS-T1-E3 include: - SI2301DS-T1-GE3 - SI2304DS-T1-GE3 - SI2305DS-T1-GE3 - SI2306DS-T1-GE3
In conclusion, the SI2302CDS-T1-E3 power MOSFET offers a compact and efficient solution for various electronic applications, with its low on-resistance and high current capability making it suitable for diverse power management needs.
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What is the maximum drain-source voltage of SI2302CDS-T1-E3?
- The maximum drain-source voltage of SI2302CDS-T1-E3 is 20V.
What is the continuous drain current of SI2302CDS-T1-E3?
- The continuous drain current of SI2302CDS-T1-E3 is 2.5A.
What is the on-resistance of SI2302CDS-T1-E3?
- The on-resistance of SI2302CDS-T1-E3 is typically 100mΩ at Vgs=4.5V.
What is the gate threshold voltage of SI2302CDS-T1-E3?
- The gate threshold voltage of SI2302CDS-T1-E3 is typically 1.0V to 2.5V.
Can SI2302CDS-T1-E3 be used in low-power applications?
- Yes, SI2302CDS-T1-E3 can be used in low-power applications due to its low on-resistance and low gate threshold voltage.
Is SI2302CDS-T1-E3 suitable for battery-powered devices?
- Yes, SI2302CDS-T1-E3 is suitable for battery-powered devices due to its low power consumption characteristics.
What are the typical applications of SI2302CDS-T1-E3?
- Typical applications of SI2302CDS-T1-E3 include load switching, power management, and battery protection in portable electronics.
Does SI2302CDS-T1-E3 require a heat sink for thermal management?
- In most cases, SI2302CDS-T1-E3 does not require a heat sink for thermal management due to its low on-resistance and power dissipation characteristics.
What are the recommended operating temperature range for SI2302CDS-T1-E3?
- The recommended operating temperature range for SI2302CDS-T1-E3 is -55°C to 150°C.
Is SI2302CDS-T1-E3 RoHS compliant?
- Yes, SI2302CDS-T1-E3 is RoHS compliant, making it suitable for use in environmentally sensitive applications.