SI2334DS-T1-GE3
Product Overview
Category: Power MOSFET
Use: Switching applications in power management
Characteristics: High efficiency, low on-resistance, small package size
Package: SO-8
Essence: Power MOSFET for efficient power management
Packaging/Quantity: Tape and reel, 3000 units per reel
Specifications
- Voltage Rating: 30V
- Continuous Drain Current: 6.3A
- On-Resistance: 0.014 ohm
- Power Dissipation: 2.5W
- Operating Temperature Range: -55°C to 150°C
Detailed Pin Configuration
The SI2334DS-T1-GE3 has a standard SO-8 pin configuration with the following pinout: 1. Gate 2. Source 3. Source 4. Drain 5. Drain 6. Source 7. Source 8. Gate
Functional Features
- Low on-resistance for high efficiency
- Fast switching speed for improved performance
- Small package size for space-constrained designs
Advantages
- High efficiency in power management applications
- Compact package size for versatile integration
- Fast switching speed for responsive operation
Disadvantages
- Limited voltage rating compared to some alternatives
- May require heat sinking for high-power applications
Working Principles
The SI2334DS-T1-GE3 operates based on the principles of field-effect transistors, utilizing its low on-resistance and fast switching speed to efficiently control power flow in various applications.
Detailed Application Field Plans
This MOSFET is suitable for a wide range of applications including: - DC-DC converters - Load switches - Battery management systems - LED lighting - Motor control
Detailed and Complete Alternative Models
- SI2334DS-T1-GE3R: Similar specifications with reverse pin configuration
- SI2334DS-T1-E3: Lower on-resistance for higher current handling
- SI2334DS-T1-GE3-ND: Lead-free version for environmental compliance
In conclusion, the SI2334DS-T1-GE3 Power MOSFET offers high efficiency and compact design, making it suitable for various power management applications. Its specifications, functional features, and application versatility make it a competitive choice in the market.
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What is the maximum voltage rating of SI2334DS-T1-GE3?
- The maximum voltage rating of SI2334DS-T1-GE3 is 30V.
What is the maximum continuous drain current of SI2334DS-T1-GE3?
- The maximum continuous drain current of SI2334DS-T1-GE3 is 6.3A.
What is the on-resistance of SI2334DS-T1-GE3?
- The on-resistance of SI2334DS-T1-GE3 is typically 0.009 ohms.
What is the gate threshold voltage of SI2334DS-T1-GE3?
- The gate threshold voltage of SI2334DS-T1-GE3 is typically 1.5V.
What are the typical applications for SI2334DS-T1-GE3?
- SI2334DS-T1-GE3 is commonly used in load switching, power management, and battery protection applications.
What is the operating temperature range of SI2334DS-T1-GE3?
- The operating temperature range of SI2334DS-T1-GE3 is -55°C to 150°C.
Does SI2334DS-T1-GE3 have built-in ESD protection?
- Yes, SI2334DS-T1-GE3 features built-in ESD protection.
What is the package type of SI2334DS-T1-GE3?
- SI2334DS-T1-GE3 is available in a PowerPAK® SO-8 package.
Is SI2334DS-T1-GE3 RoHS compliant?
- Yes, SI2334DS-T1-GE3 is RoHS compliant.
Can SI2334DS-T1-GE3 be used in automotive applications?
- Yes, SI2334DS-T1-GE3 is suitable for use in automotive applications, such as in power distribution systems and motor control.