SI3410DV-T1-E3

Product Overview

• Belongs to: Power MOSFET
• Category: Electronic component
• Use: Power switching applications
• Characteristics: High efficiency, low on-resistance, small package size
• Package: DFN (Dual Flat No-Lead)
• Essence: Efficient power management
• Packaging/Quantity: Tape and reel, 3000 units per reel

Specifications

• Voltage - Drain-Source Breakdown (V(BR)DSS): 30V
• Current - Continuous Drain (Id) @ 25°C: 12A
• Rds On (Max) @ Id, Vgs: 6.5 mOhm @ 12A, 10V
• Input Capacitance (Ciss) @ Vds: 2200pF @ 15V
• Power Dissipation (Max): 2.5W

Detailed Pin Configuration

• Pin 1: Gate
• Pin 2: Source
• Pin 3: Drain
• Pin 4: Source

Functional Features

• Fast switching speed
• Low gate charge
• Avalanche energy rated
• RoHS compliant

Advantages and Disadvantages

• Advantages:
  • High efficiency
  • Small package size
  • RoHS compliant
• Disadvantages:
  • Limited voltage range
  • Sensitive to static electricity

Working Principles

The SI3410DV-T1-E3 operates based on the principles of field-effect transistors, utilizing a gate voltage to control the flow of current between the drain and source terminals.

Detailed Application Field Plans

This MOSFET is suitable for various power switching applications, including but not limited to: - DC-DC converters - Load switches - Motor control - Battery management systems

Detailed and Complete Alternative Models

• SI3443DV-T1-E3: Similar specifications with higher voltage rating
• SI3456DV-T1-E3: Higher current handling capability with slightly larger package size

Note: The above information is for reference purposes only. Always refer to the manufacturer's datasheet for accurate details.

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