SI4386DY-T1-GE3

Product Overview

Category

The SI4386DY-T1-GE3 belongs to the category of power MOSFETs.

Use

It is commonly used in power management applications, such as voltage regulation and switching circuits.

Characteristics

• High power handling capability
• Low on-state resistance
• Fast switching speed
• Low gate drive requirements

Package

The SI4386DY-T1-GE3 is typically available in a surface-mount DPAK (TO-252) package.

Essence

This MOSFET is essential for efficient power control and management in various electronic devices and systems.

Packaging/Quantity

It is usually supplied in reels with a standard quantity of 2500 pieces per reel.

Specifications

• Drain-Source Voltage (Vdss): 30V
• Continuous Drain Current (Id): 18A
• RDS(ON) (Max) @ VGS = 10V: 5.5mΩ
• Gate-Source Voltage (Vgs): ±20V
• Total Gate Charge (Qg): 22nC
• Operating Temperature Range: -55°C to 150°C

Detailed Pin Configuration

The SI4386DY-T1-GE3 has a standard pin configuration with three pins: Gate (G), Drain (D), and Source (S).

Functional Features

• Low on-state resistance for minimal power dissipation
• Fast switching speed for improved efficiency
• High current handling capability for robust performance
• Enhanced thermal characteristics for reliable operation

Advantages

• Efficient power management
• Reduced heat generation
• Improved system reliability
• Compact design due to surface-mount package

Disadvantages

• Sensitive to static electricity
• Requires careful handling during assembly

Working Principles

The SI4386DY-T1-GE3 operates based on the principles of field-effect transistors, where the gate voltage controls the flow of current between the drain and source terminals. By modulating the gate voltage, the MOSFET can efficiently regulate power flow within a circuit.

Detailed Application Field Plans

The SI4386DY-T1-GE3 is widely used in: - Switching power supplies - DC-DC converters - Motor control systems - Battery management systems - LED lighting applications

Detailed and Complete Alternative Models

Some alternative models to the SI4386DY-T1-GE3 include: - SI2302DS-T1-GE3 - SI4410DY-T1-GE3 - SI7469DP-T1-GE3 - SI7850DP-T1-GE3

In conclusion, the SI4386DY-T1-GE3 power MOSFET offers high-performance characteristics and is widely utilized in various power management applications, contributing to efficient and reliable electronic systems.

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